LS485S

www.DataSheet4U.com LS485S Vishay Telefunken Silicon Epitaxial Planar Diodes Applications General purposes 96 12009 Absolute Maximum Ratings Tj = 25_ C Parameter Peak reverse voltage Reverse voltage Forward current Forward peak current Peak forward surge current Junction temperature Storage temperature range Test Conditions IR= 100m A Type Symbol VRRM VR IF IFM IFSM Tj Tstg Value 200 180 200 500 4 150 –55...+150 Unit V V mA mA A °C °C f=50Hz tp=1m s Maximum Thermal Resistance Tj = 25_ C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol RthJA Value 500 Unit K/W Electrical Characteristics Parameter Forward voltage g Test Conditions IF=10mA, Tj= –40° C IF=10mA, Tj= 25° C IF=10mA, Tj= 125° C VR= 10V, Tj= –40° C VR= 10V, Tj= 25° C VR= 10V, Tj=125° C IR=100m A, Tj= –40° C IR=100m A, Tj= 25° C IR=100m A, Tj= 125° C VR=0V, f=1MHz Type Symbol VF VF VF IR IR IR V(BR) V(BR) V(BR) CD Min Typ Max 1.2 1.1 1.1 25 25 150 Unit V V V nA nA nA V V V pF Reverse current Breakdown voltage g 200 200 200 5 Diode capacitance www.DataSheet4U.com Document Number 85565 Rev. 1, 09-Apr-99 www.vishay.de FaxBack +1-408-970-5600 1 (3) www.DataSheet4U.com LS485S Vishay Telefunken Dimensions in mm 96 12071 www.vishay.de FaxBack +1-408-970-5600 2 (3) www.DataSheet4U.com Document Number 85565 Rev. 1, 09-Apr-99 www.DataSheet4U.com LS485S Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all p...