LS3954A

LS3954A LS3954 LS3955 LS3956 LS3958 Linear Integrated Systems FEATURES LOW DRIFT LOW LEAKAGE LOW NOISE |∆VGS1-2 /∆T|= 5µV/°C max. IG = 20pA TYP. en= 10nV/√Hz TYP. LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature G1 -65° to +200°C +150°C D1 S1 D12 G1 G2 S2 D2 31 X 32 MILS 400mW @ 25°C BOTTOM VIEW 1 S1 7 G2 6 D2 3 5 S2 Maximum Voltage and Current for Each Transistor NOTE 1 Gate to Drain or Source Voltage 60V -VGSS -VDSO -IG(f) Drain to Source Voltage Gate Forward Current 60V 50mA Maximum Power Dissipation Device Dissipation @ Free Air - Total ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS LS3954A LS3954 LS3955 LS3956 LS3958 UNITS CONDITIONS 5 10 25 50 100 µV/°C VDG= 20V, ID= 200µA |∆VGS1-2 /∆T| max. Drift vs. Temperature |VGS1-2| max. SYMBOL BVGSS BVGGO Yfss Yfs |Yfs1-2/Yfs| IDSS |IDSS1-2/IDSS| VGS(off) or VP VGS -IG -IG -IG -IGSS Offset Voltage CHARACTERISTICS Breakdown Voltage Gate-to-Gate Breakdown TRANSCONDUCTANCE Full Conduction Typical Operation Mismatch DRAIN CURRENT Full Conduction Mismatch at Full Conduction GATE VOLTAGE Pinchoff Voltage Operating Range GATE CURRENT Operating High Temperature Reduced VDG At Full Conduction ----20 -5 -50 50 -100 pA nA pA pA VDG= 20V VDG= 20V VDG= 10V VDG= 20V ID= 200µA ID= 200µA ID= 200µA VDS= 0 1 0.5 2 -4.5 4 V V VDS= 20V VDS= 20V ID= 1nA ID= 200µA 0.5 -2 1 5 5...