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LPV1500

Filtronic Compound Semiconductors
Part Number LPV1500
Manufacturer Filtronic Compound Semiconductors
Description PACKAGED LOW NOISE PHEMT
Published Apr 25, 2005
Detailed Description Filtronic Solid State FEATURES LPV1500 1 W Power PHEMT DRAIN DRAIN • • • • • • +31.5 dBm Typical Power at 18 GHz 8.5 ...
Datasheet PDF File LPV1500 PDF File

LPV1500
LPV1500

Overview
Filtronic Solid State FEATURES LPV1500 1 W Power PHEMT DRAIN DRAIN • • • • • • +31.
5 dBm Typical Power at 18 GHz 8.
5 dB Typical Power Gain at 18 GHz +27 dBm at 3.
3V Battery Voltage +45 dBm Typical Intercept Point 50% Power-Added-Efficiency at 18 GHz Plated Source Thru-Vias SOURCE GATE DIE SIZE: 16.
5 x 16.
1 mils (420 x 410 µm) DIE THICKNESS: 3.
0 mils (75 µm typ.
) BONDING PADS: 1.
9 x 2.
4 mils (50 x 60 µm typ.
) DESCRIPTION AND APPLICATIONS The LPV1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.
25 µm by 1500 µm Schottky barrier gate.
The recessed “mushroom” gate s...


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