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LMUN2132LT3 Dataheets PDF



Part Number LMUN2132LT3
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description Bias Resistor Transistors
Datasheet LMUN2132LT3 DatasheetLMUN2132LT3 Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a si.

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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. LMUN2111LT1 SERIES 3 1 2 SOT-23 • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel. PIN 1 BASE (INPUT) R1 PIN 3 COLLECTOR (OUTPUT) R2 PIN 2 EMITTER (GROUND) MARKINGDIAGRAM A6x M MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc A6x = Device Marking x M = A – L(See Page 2) = Date Code DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance – Junction-to-Ambient Thermal Resistance – Junction-to-Lead Junction and Storage Temperature Range 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad Symbol PD Max 246 (Note 1.) 400 (Note 2.) 1.5 (Note 1.) 2.0 (Note 2.) 508 (Note 1.) 311 (Note 2.) 174 (Note 1.) 208 (Note 2.) –55 to +150 Unit mW °C/W °C/W °C/W °C data sheet. RθJA RθJL TJ, Tstg LMUN2111-1/8 LESHAN RADIO COMPANY, LTD. LMUN2111LT1 Series DEVICE MARKING AND RESISTOR VALUES Device LMUN21110LT1 LMMUN2110LT3 LMUN2111LT1 LMMUN2111LT3 LMUN2112LT1 LMUN2112LT3 LMUN2113LT1 LMUN2113LT3 LMUN2114LT1 LMUN2114LT3 LMUN2115LT1 (Note 3.) LMUN2115LT3 LMUN2116LT1 (Note 3.) LMUN2116LT3 LMUN2130LT1 (Note 3.) LMUN2130LT3 LMUN2131LT1 (Note 3.) LMUN2131LT3 LMUN2132LT1 (Note 3.) LMUN2132LT3 LMUN2133LT1 (Note 3.) LMUN2133LT3 LMUN2134LT1 (Note 3.) LMUN2134LT3 Package SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 Marking A6O A6A A6B A6C A6D A6E A6F A6G A6H A6J A6K A6L R1 (K) 47 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 R2 (K) 8 10 22 47 47 8 8 1.0 2.2 4.7 47 47 Shipping 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (V EB = 6.0 V, IC = 0) LMUN2110LT1 LMUN2111LT1 LMUN2112LT1 LMUN2113LT1 LMUN2114LT1 LMUN2115LT1 LMUN2116LT1 LMUN2130LT1 LMUN2131LT1 LMUN2132LT1 LMUN2133LT1 LMUN2134LT1 ICBO ICEO IEBO – – – – – – – – – – – – 50 50 – – – – – – – – – – – – 100 500 0.1 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 nAdc nAdc mAdc Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) Collector-Emitter Breakdown Voltage (Note 4.) (IC = 2.0 mA, IB = 0) 3. New devices. Updated curves to follow in subsequent data sheets. 4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% V(BR)CBO V(BR)CEO Vdc Vdc LMUN2111–2/8 LESHAN RADIO COMPANY, LTD. LMUN2111LT1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic ON CHARACTERISTICS (Note 5.) DC Current Gain (V CE = 10 V, IC = 5.0 mA ) LMUN2110LT1 LMUN2111LT1 LMUN2112LT1 LMUN2113LT1 LMUN2114LT1 LMUN2115LT1 LMUN2116LT1 LMUN2130LT1 LMUN2131LT1 LMUN2132LT1 LMUN2133LT1 LMUN2134LT1 hFE 80 35 60 80 80 160 160 3.0 8.0 15 80 80 140 60 100 140 140 250 250 5.0 15 27 140 130 – – – – – – – – – – – – 0.25 Vdc Symbol Min Typ Max Unit Collector-Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5 mA) LMUN2130LT1/LMUN2131LT1 (IC = 10 mA, IB = 1 mA) LMUN2115LT1/LMUN2116LT1/ LMUN2132LT1/LMUN2133LT1/LMUN2134LT1 Output Voltage (on) (V CC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) LMUN2110LT1 LMUN2114LT1 LMUN2111LT1 LMUN2112LT1 LMUN2114LT1 LMUN2115LT1 LMUN2116LT1 LMUN2130LT1 LMUN2131LT1 LMUN2132LT1 LMUN2133LT1 LMUN2134LT1 LMUN2113LT1 VCE(sat) VOL (V CC = 5.0 V,.


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