LMA110B

Filtronic Solid State Features 3.5dB Typical Noise Figure 12.5dB Typical Gain 12dBm Saturated Output Power 12dB Input/Output Return Loss Typical 0.5-6GHz Frequency Bandwidth +8 Volts Single Bias Supply DC Decoupled RF Input and Output Chip Size : 1.62mmX1.62mm (.064”X.064”) Chip Thickness : 100µm 2 Pad Dimension : 100µm .5-8GHz MESFET Amplifier LMA110B Description The Filtronic LMA110B is a GaAs monolithic distributive amplifier which operates from 0.5 to 8 GHz. This amplifier produces a typical gain of 12.5dB with a noise figure of 3.5dB. The LMA110B is suitable for wide-band low noise gain block, EW and commercial PCN applications. DC decoupled input and output RF port. Ground is provided to the circuitry through vias to the backside metallization. Electrical Specifications at Ta=25°C (VDD=+8.0V, Zin=Zout=50Ω) Symbol BW S21 Ids ∆S21 NF RLin RLout S12 P-1dB Limit Typ. 12.5 85 ±1 3.5 -10 -10 -30 10 Parameter Operating Bandwidth Small Signal Gain Drain Operating Current Small Signal Gain Flatness Noise Figure Input Return Loss Output Return Loss Reverse Isolation 1-dB Gain Compression Power Test Conditions VD=8V, Vg1=Vg2=8V Min. 0.5 11 60 Max. 8 110 ±1.5 4.5 -8 -8 @ 50% Idss 8 Units GHz dB mA dB dB dB dB dB dBm Absolute Maximum Ratings Symbol Vdd Idd Pin Pt Tch Tstg Tmax. Parameter/Conditions Drain Supply Voltage Total Drain Current RF Input Power Power Dissipation Operating Channel Temperature Storage Temperature Max. Assembly Temp. (1 min. max...