LMA110

Filtronic Solid State Features 2.7dB Typical Noise Figure 23dB Typical Gain 12dBm Saturated Output Power 12dB Input/Output Return Loss Typical 0.5-6GHz Frequency Bandwidth +8.5 Volts Dual Bias Supply DC Decoupled RF Input and Output Chip Size : 1.62mmX1.62mm (.064”X.064”) Chip Thickness : 100µm 2 Pad Dimension : 100µm .5-6 GHz MESFET Amplifier LMA110A Description The Filtronic LMA110A is a GaAs monolithic distributive amplifier which operates from 0.5 to 6 GHz. This amplifier produces a typical gain of 23dB with a noise figure of 2.7dB. The LMA110A is suitable for wide-band low noise gain block, EW and commercial PCN applications. DC decoupled input and output RF port. Ground is provided to the circuitry through vias to the backside metallization. Electrical Specifications at Ta=25°C (VDD=+8.0V, Zin=Zout=50Ω) Limit Typ. 23 100 ±0.4 2.7 -10 -10 -45 10 Symbol BW S21 Ids ∆S21 NF RLin RLout S12 P-1dB Parameter Operating Bandwidth Small Signal Gain Drain Operating Current Small Signal Gain Flatness Noise Figure Input Return Loss Output Return Loss Reverse Isolation 1-dB Gain Compression Power Test Conditions VD=8V, Vg=-.85V Min. 0.5 20 60 Max. 6 150 ±1 3.5 @ 50% Idss -35 7 Units GHz dB mA dB dB dB dB dB dBm Absolute Maximum Ratings Symbol Vdd Idd Pin Pt Tch Tstg Tmax. Parameter/Conditions Drain Supply Voltage Total Drain Current RF Input Power Power Dissipation Operating Channel Temperature Storage Temperature Max. Assembly Temp. (1 min. max.) Min....