DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
PDTC143ES NPN resistor-equipped transistor
Product specificat...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
PDTC143ES
NPN resistor-equipped
transistor
Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 1998 May 20
Philips Semiconductors
Product specification
NPN resistor-equipped
transistor
FEATURES Built-in bias resistors R1 and R2 (typ. 4.7 kΩ each) Simplification of circuit design Reduces number of components and board space. APPLICATIONS Especially suitable for space reduction in interface and driver circuits Inverter circuit configurations without use of external resistors. DESCRIPTION
NPN resistor-equipped
transistor in a TO-92; SOT54 plastic package.
PNP complement: PDTA143ES.
1 2 3
MGL136 MAM364
PDTC143ES
handbook, halfpage
2 R1 1 R2 3
1 2 3
Fig.1 Simplified outline (TO-92; SOT54) and symbol.
PINNING PIN 1 2 3 DESCRIPTION base/input collector/output emitter/ground Fig.2
Equivalent inverter symbol.
QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 R2 -----R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor resistor ratio Tamb ≤ 25 °C IC = 10 mA; VCE = 5 V CONDITIONS open base − − − − 30 3.3 0.8 MIN. − − − − − 4.7 1 TYP. MAX. 50 100 100 500 − 6.1 1.2 kΩ UNIT V mA mA mW
1998 May 20
2
Philips Semiconductors
Product specification
NPN resistor-equipped
transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PAR...