PDTC124XE

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124XE NPN resistor-equipped transistor Product specification Supersedes data of 1998 Sep 21 1999 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor FEATURES Built-in bias resistors R1 and R2 (typ. 22 kΩ and 47 kΩ respectively) Simplification of circuit design Reduces number of components and board space. APPLICATIONS Especially suitable for space reduction in interface and driver circuits Inverter circuit configurations without use of external resistors. Fig.1 DESCRIPTION NPN resistor-equipped transistor in a SC-75 (SOT416) plastic package. PNP complement: PDTA124XE. MARKING TYPE NUMBER PDTC124XE PINNING PIN 1 2 3 base/input emitter/ground collector/output DESCRIPTION MARKING CODE 32 1 2 MGA893 - 1 PDTC124XE handbook, halfpage 3 R1 1 R2 3 1 Top view 2 MAM346 2 Simplified outline (SC-75; SOT416) and symbol. 3 Fig.2 Equivalent inverter symbol. 1999 May 18 2 Philips Semiconductors Product specification NPN resistor-equipped transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwis...