Document
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
PDTC124ES NPN resistor-equipped transistor
Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 1998 May 08
Philips Semiconductors
Product specification
NPN resistor-equipped transistor
FEATURES • Built-in bias resistors R1 and R2 (typ. 22 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors. DESCRIPTION NPN resistor-equipped transistor in a TO-92; SOT54 plastic package. PNP complement: PDTA124ES.
1 2 3
MGL136 MAM364
PDTC124ES
handbook, halfpage
2 R1 1 R2 3
1 2 3
Fig.1 Simplified outline (TO-92; SOT54) and symbol.
PINNING PIN 1 2 3 DESCRIPTION base/input collector/output emitter/ground Fig.2
Equivalent inverter symbol.
QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 R2 -----R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor resistor ratio Tamb ≤ 25 °C IC = 5 mA; VCE = 5 V CONDITIONS open base − − − − 60 15.4 0.8 MIN. − − − − − 22 1 TYP. MAX. 50 100 100 500 − 28.6 1.2 kΩ UNIT V mA mA mW
1998 May 08
2
Philips Semiconductors
Product specification
NPN resistor-equipped transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICEO IEBO hFE VCEsat Vi(off) Vi(on) R1 R2 -----R1 Cc PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain input-off voltage input-on voltage input resistor resistor ratio collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz CONDITIONS IE = 0; VCB = 50 V IB = 0; VCE = 30 V IB = 0; VCE = 30 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 5 mA; VCE = 5 V IC = 100 µA; VCE = 5 V IC = 5 mA; VCE = 0.3 V MIN. − − − − 60 − − 2.5 15.4 0.8 − PARAMETER CONDITIONS output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 − − − − − −65 − −65 CONDITIONS open emitter open base open collector − − − MIN.
PDTC124ES
MAX. 50 50 10 +40 −10 100 100 500 +150 150 +150 V V V V V
UNIT
mA mA mW °C °C °C
VALUE 250
UNIT K/W
thermal resistance from junction to ambient note 1
TYP. − − − − − − 1.1 1.7 22 1 −
MAX. 100 1 50 180 − 150 0.8 − 28.6 1.2 2.5
UNIT nA µA µA µA mV V V kΩ
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA
pF
1998 May 08
3
Philips Semiconductors
Product specification
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