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PDTC124ES Dataheets PDF



Part Number PDTC124ES
Manufacturers NXP
Logo NXP
Description NPN resistor-equipped transistor
Datasheet PDTC124ES DatasheetPDTC124ES Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PDTC124ES NPN resistor-equipped transistor Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 (typ. 22 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interfac.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PDTC124ES NPN resistor-equipped transistor Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 (typ. 22 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors. DESCRIPTION NPN resistor-equipped transistor in a TO-92; SOT54 plastic package. PNP complement: PDTA124ES. 1 2 3 MGL136 MAM364 PDTC124ES handbook, halfpage 2 R1 1 R2 3 1 2 3 Fig.1 Simplified outline (TO-92; SOT54) and symbol. PINNING PIN 1 2 3 DESCRIPTION base/input collector/output emitter/ground Fig.2 Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 R2 -----R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor resistor ratio Tamb ≤ 25 °C IC = 5 mA; VCE = 5 V CONDITIONS open base − − − − 60 15.4 0.8 MIN. − − − − − 22 1 TYP. MAX. 50 100 100 500 − 28.6 1.2 kΩ UNIT V mA mA mW 1998 May 08 2 Philips Semiconductors Product specification NPN resistor-equipped transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICEO IEBO hFE VCEsat Vi(off) Vi(on) R1 R2 -----R1 Cc PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain input-off voltage input-on voltage input resistor resistor ratio collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz CONDITIONS IE = 0; VCB = 50 V IB = 0; VCE = 30 V IB = 0; VCE = 30 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 5 mA; VCE = 5 V IC = 100 µA; VCE = 5 V IC = 5 mA; VCE = 0.3 V MIN. − − − − 60 − − 2.5 15.4 0.8 − PARAMETER CONDITIONS output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 − − − − − −65 − −65 CONDITIONS open emitter open base open collector − − − MIN. PDTC124ES MAX. 50 50 10 +40 −10 100 100 500 +150 150 +150 V V V V V UNIT mA mA mW °C °C °C VALUE 250 UNIT K/W thermal resistance from junction to ambient note 1 TYP. − − − − − − 1.1 1.7 22 1 − MAX. 100 1 50 180 − 150 0.8 − 28.6 1.2 2.5 UNIT nA µA µA µA mV V V kΩ collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA pF 1998 May 08 3 Philips Semiconductors Product specification .


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