PDTC115E

DISCRETE SEMICONDUCTORS DATA SHEET PDTC115E series NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Product data sheet Supersedes data of 2004 Apr 06 2004 Aug 06 NXP Semiconductors NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Product data sheet PDTC115E series FEATURES Built-in bias resistors Simplified circuit design Reduction of component count Reduced pick and place costs. APPLICATIONS General purpose switching and amplification Inverter and interface circuits Circuit driver. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO collector-emitter voltage IO output current (DC) R1 bias resistor R2 bias resistor TYP. − − 100 100 MAX. UNIT 50 V 20 mA − kΩ − kΩ DESCRIPTION NPN resistor equipped transistor (see “Simplified outline, symbol and pinning” for package details). PRODUCT OVERVIEW TYPE NUMBER PDTC115EE PDTC115EEF PDTC115EK PDTC115EM PDTC115ES PDTC115ET PDTC115EU PACKAGE PHILIPS SOT416 SOT490 SOT346 SOT883 SOT54 (TO-92) SOT23 SOT323 EIAJ SC-75 SC-89 SC-59 SC-101 SC-43 − SC-70 Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. MARKING CODE PNP COMPLEMENT 46 49 56 DV TC115E *44(1) *15(1) PDTA115EE PDTA115EEF PDTA115EK PDTA115EM PDTA115ES PDTA115ET PDTA115EU 2004 Aug 06 2 NXP Semiconductors NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ SIMPLIFIED OUTLINE, SYMBOL AND PINNING TYPE NUMBER PDTC115ES SIMPLIFIED OUTLINE AND SYMBOL handbook, halfpage 1 2 3 2 R1 1 R2 3...