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PDTA144EK Dataheets PDF



Part Number PDTA144EK
Manufacturers NXP
Logo NXP
Description PNP resistor-equipped transistor
Datasheet PDTA144EK DatasheetPDTA144EK Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTA144EK PNP resistor-equipped transistor Product specification Supersedes data of 1997 Sep 05 File under Discrete Semiconductors, SC04 1998 May 20 Philips Semiconductors Product specification PNP resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 (typ. 47 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interfac.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTA144EK PNP resistor-equipped transistor Product specification Supersedes data of 1997 Sep 05 File under Discrete Semiconductors, SC04 1998 May 20 Philips Semiconductors Product specification PNP resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 (typ. 47 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors. DESCRIPTION PNP resistor-equipped transistor in an SC-59 plastic package. NPN complement: PDTC144EK. PINNING MGA893 - 1 PDTA144EK 3 3 R1 1 R2 2 1 Top view 2 MAM262 Fig.1 Simplified outline (SC-59) and symbol. MARKING TYPE NUMBER PDTA144EK 2 1 3 MARKING CODE 07 PIN 1 2 3 DESCRIPTION base/input emitter/ground (+) collector/output Fig.2 Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 R2 ------R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor resistor ratio Tamb ≤ 25 °C IC = −5 mA; VCE = −5 V CONDITIONS open base − − − − 80 33 0.8 MIN. − − − − − 47 1 TYP. MAX. −50 −100 −100 250 − 61 1.2 kΩ UNIT V mA mA mW 1998 May 20 2 Philips Semiconductors Product specification PNP resistor-equipped transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICEO IEBO hFE VCEsat Vi(off) Vi(on) R1 R2 ------R1 Cc PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage input-off voltage input-on voltage input resistor resistor ratio collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz CONDITIONS IE = 0; VCB = −50 V IB = 0; VCE = −30 V IB = 0; VCE = −30 V; Tj = 150 °C IC = 0; VEB = −5 V IC = −5 mA; VCE = −5 V IC = −10 mA; IB = −0.5 mA IC = −100 µA; VCE = −5 V IC = −2 mA; VCE = −0.3 V MIN. − − − − 80 − − −3 33 0.8 − PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 500 output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 − − − − − −65 − −65 CONDITIONS open emitter open base open collector − − − MIN. PDTA144EK MAX. −50 −50 −10 +10 −40 −100 −100 250 +150 150 +150 V V V V V UNIT mA mA mW °C °C °C UNIT K/W TYP. − − − − − − −1.2 −1.6 47 1 − MAX. −100 −1 −50 −90 − −150 −0.8 − 61 1.2 3 UNIT nA µA µA µA mV V V kΩ pF 1998 May 20 3 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA144EK 103 handbook, halfpage hFE (1) (2) (3) MBK802 −10−1 handbook, halfpage (1) (2) (3) MBK801 VCEsat (V) 102 10 1 −10−1 −1 −10 IC (mA) −102 −10−2 −10−1 −1 −10 IC (mA) −102 VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. Fig.3 DC current gain as a function of collector current; typical values. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. handbook, halfpage −10 MBK804 −102 handbook, halfpage Vi(on) MBK803 Vi(off) (V) (V) −10 (1) (1) (2) (3) −1 (2) (3) −1 −10−1 −10−2 −10−1 −1 IC (mA) −10 −10−1 −10−1 −1 −10 IC (mA) −102 VCE = −5 V. (1) Tamb = −40 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. VCE = −0.3 V. (1) Tamb = −40 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.5 Input-off voltage as a function of collector current; typical values. Fig.6 Input-on voltage as a function of collector current; typical values. 1998 May 20 4 Philips Semiconductors Product specification PNP resistor-equipped transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads PDTA144EK SOT346 E D B A X HE v M A 3 Q A A1 1 e1 e bp 2 w M B detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.3 1.0 A1 0.1 0.013 bp 0.50 0.35 c 0.26 0.10 D 3.1 2.7 E 1.7 1.3 e 1.9 e1 0.95 HE 3.0 2.5 Lp 0.6 0.2 Q 0.33 0.23 v 0.2 w 0.2 OUTLINE VERSION SOT346 REFERENCES IEC JEDEC TO-236 EIAJ SC-59 EUROPEAN PROJECTION ISSUE DATE 97-02-28 1998 May 20 5 Philips Semiconductors Product specification PNP resistor-equipped transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values PDTA144EK This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data .


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