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PDTA143ZK

NXP

PNP resistor-equipped transistors R1 = 4.7 kW/ R2 = 47 kW

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTA143ZK PNP resistor-equipped transistor Product specificat...


NXP

PDTA143ZK

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTA143ZK PNP resistor-equipped transistor Product specification Supersedes data of 1998 May 18 1999 May 25 Philips Semiconductors Product specification PNP resistor-equipped transistor FEATURES Built-in bias resistors R1 and R2 (typ. 4.7 kΩ and 47 kΩ respectively) Simplification of circuit design Reduces number of components and board space. APPLICATIONS Especially suitable for space reduction in interface and driver circuits Inverter circuit configurations without use of external resistors. DESCRIPTION PNP resistor-equipped transistor in a SC-59 (SOT346) plastic package. NPN complement: PDTC143ZK. MARKING TYPE NUMBER PDTA143ZK MARKING CODE 19 1 Top view 2 MAM262 PDTA143ZK PINNING PIN 1 2 3 base/input emitter/ground (+) collector/output DESCRIPTION 3 3 R1 1 R2 2 Fig.1 Simplified outline (SC-59; SOT346) and symbol. 1 2 MGA893 - 1 3 Fig.2 Equivalent inverter symbol. 1999 May 25 2 Philips Semiconductors Product specification PNP resistor-equipped transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise ...




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