PDTA143XE

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA143XE PNP resistor-equipped transistor Product specification 1999 Apr 20 Philips Semiconductors Product specification PNP resistor-equipped transistor FEATURES Built-in bias resistors R1 and R2 (typ. 4.7 kΩ and 10 kΩ respectively) Simplification of circuit design Reduces number of components and board space. 1 2 handbook, halfpage PDTA143XE 3 R1 1 R2 3 2 MAM345 APPLICATIONS Especially suitable for space reduction in interface and driver circuits Inverter circuit configurations without use of external resistors. DESCRIPTION PNP resistor-equipped transistor in an SC-75 (SOT416) plastic package. PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground (+) collector/output Fig.2 Top view Fig.1 Simplified outline SC-75 (SOT416) and symbol. MARKING TYPE NUMBER PDTA143XE 2 MGA893 - 1 1 3 MARKING CODE 35 Equivalent inverter symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1. Refer to SC-75 (SOT416) standard mounting conditions. 1999 Apr 20 2 output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 − − − − − −65 − −65 7 −20 −100 −100 150 +150 150 +150 V V mA mA mW °C °C °C CONDITIONS open emitter open base open...