DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D114
PDTA143EK PNP resistor-equipped transistor
Product specificat...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D114
PDTA143EK
PNP resistor-equipped
transistor
Product specification Supersedes data of 1997 Jun 17 File under Discrete Semiconductors, SC04 1998 May 18
Philips Semiconductors
Product specification
PNP resistor-equipped
transistor
FEATURES Built-in bias resistors R1 and R2 (typ. 4.7 kΩ each) Simplification of circuit design Reduces number of components and board space. APPLICATIONS Especially suitable for space reduction in interface and driver circuits. Inverter circuit configurations without use of external resistors. DESCRIPTION
PNP resistor-equipped
transistor in a plastic SC-59 package.
NPN complement: PDTC143EK. PINNING
MGA893 - 1
PDTA143EK
3 3 R1 1 R2 2 1 Top view 2
MAM262
Fig.1 Simplified outline (SC-59) and symbol.
MARKING TYPE NUMBER PDTA143EK
2
1
3
MARKING CODE 01
PIN 1 2 3
DESCRIPTION base/input emitter/ground (+) collector/output Fig.2 Equivalent inverter symbol.
QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 R2 ------R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor resistor ratio Tamb ≤ 25 °C IC = −10 mA; VCE = −5 V CONDITIONS open base − − − − 30 3.3 0.8 MIN. − − − − − 4.7 1 TYP. MAX. −50 −100 −100 250 − 6.1 1.2 kΩ UNIT V mA mA mW
1998 May 18
2
Philips Semiconductors
Product specification
PNP resistor-equipped
transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System ...