DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PDTA114TT PNP resistor-equipped transistor
Objective specific...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PDTA114TT
PNP resistor-equipped
transistor
Objective specification Supersedes data of 1998 May 18 1999 Apr 13
Philips Semiconductors
Objective specification
PNP resistor-equipped
transistor
FEATURES Built-in bias resistor R1 (typ. 10 kΩ) Simplification of circuit design Reduces number of components and board space. APPLICATIONS Especially suitable for space reduction in interface and driver circuits Inverter circuit configurations without use of an external resistor.
1 Top view 2
MAM286
PDTA114TT
handbook, 4 columns
3 3 R1 1 2
Fig.1 Simplified outline (SOT23) and symbol. DESCRIPTION
PNP resistor-equipped
transistor in a SOT23 plastic package.
NPN complement: PDTC114TT.
1 3 2
MARKING TYPE NUMBER PDTA114TT Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗11
PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground (+) collector/output
MGA893 - 1
Fig.2
Equivalent inverter symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IO ICM Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − −65 − −65 MIN. ...