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www.fairchildsemi.com
KA5x0165Rxx-SERIES
KA5H0165R/RN, KA5M0165R/RN, KA5L0165R/RN, KA5H0165RVN Fairchild Power Switch(FPS)
Features
• • • • • • • • • Precision Fixed Operating Frequency (100/67/50kHz ) Low Start-up Current (Typ. 100uA) Pulse by Pulse Current Limiting Over Load Protection Over Voltage Protection (Min. 25V) - except KA5H0165RVN Internal Thermal Shutdown Function Under Voltage Lockout Internal High Voltage Sense FET Auto-Restart Mode
Description
The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed oscillator, under voltage lock out, leading edge blanking, optimized gate turn-on/ turn-off driver, thermal shut down protection, over voltage protection, and temperature compensated precision current sources for loop compensation and fault protection circuitry compared to discrete MOSFET and controller or RCC switching converter solution, The Fairchild Power Switch(FPS) can reduce total component count, design size, weight and at the same time increase efficiency, productivity, and system reliability. It is well suited for cost effective design of flyback converters.
TO-220F-4L 8-DIP
1 1 1. GND 2. Drain 3. Vcc 4. FB 1.6.7.8. Drain 2. GND 3. Vcc 4. FB 5. NC
Internal Block Diagram
VCC 32V 5V Vref Good logic OSC S
uA
Internal bias
DRAIN SFET
R FB 5µA − 1mA 2.5R 1R 9V + 7.5V − + 27V − Thermal S/D OVER VOLTAGE S/D + L.E.B 0.1V
Q
S R Q
GND
Power on reset
Rev.1.0.5
©2003 Fairchild Semiconductor Corporation
KA5X0165RXX-SERIES
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified) Characteristic Drain-Gate Voltage (RGS=1MΩ) Gate-Source (GND) Voltage Drain Current Pulsed
(1)
Symbol VDGR VGS IDM ID ID EAS VCC,MAX VFB PD Derating TJ TA TSTG
Value 650 ±30 4.0 1.0 0.7 95 30 -0.3 to VSD 40 0.32 +160 -25 to +85 -55 to +150
Unit V V ADC ADC ADC mJ V V W W/°C °C °C °C
Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Single Pulsed Avalanche Energy Maximum Supply Voltage Analog Input Voltage Range Total Power Dissipation Operating Junction Temperature. Operating Ambient Temperature. Storage Temperature Range.
(2)
Note: 1. Repetitive rating: Pulse width limited by maximum junction temperature 2. L=24mH, starting Tj=25°C
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KA5X0165RXX-SERIES
Electrical Characteristics (SFET Part)
(Ta=25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Static Drain-Source on Resistance (Note) Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn on Delay Time Rise Time Turn Off Delay Time Fall Time Total Gate Charge (Gate-Source+Gate-Drain) Gate-Source Charge Gate-Drain (Miller) Charge
(Note)
Symbol BVDSS IDSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
Condition VGS=0V, ID=50µA VDS=Max. Rating, VGS=0V VDS=0.8Max. Rating, VGS=0V, TC=125°C VGS=10V, ID=0.5A VDS=50V, ID=0.5A VGS=0V, VDS=25V, f=1MHz VDD=0.5B VDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=1.0A, VDS=0.5B VDSS (MOSFET switching time is essentially independent of operating temperature)
Min. 650 0.5 -
Typ. 8 250 25 10 12 4 30 10 3 9
Max. 50 200 10 21 -
Unit V µA µA Ω S pF
nS
nC
Note: 1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2% 2. 1 S = --R
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KA5X0165RXX-SERIES
Electrical Characteristics (Control Part) (Continued)
(Ta=25°C unless otherwise specified) Parameter UVLO SECTION Start Threshold Voltage Stop Threshold Voltage OSCILLATOR SECTION Initial Accuracy Initial Accuracy Initial Accuracy Frequency Change With Temperature Maximum Duty Cycle Maximum Duty Cycle FEEDBACK SECTION Feedback Source Current Shutdown Feedback Voltage Shutdown Delay Current REFERENCE SECTION Output Voltage (1) Temperature Stability Peak Current Limit PROTECTION SECTION Thermal Shutdown Temperature (1) Over Voltage Protection TOTAL STANDBY CURRENT SECTION Start-up Current Operating Supply Current (Control Part Only) ISTART IOP VCC=14V VCC ≤ 28 100 7 170 12 µA mA TSD VOVP except KA5H0165RVN 140 25 160 27 29 °C V
(1)(2) (2)
Symbol VSTART VSTOP FOSC FOSC FOSC ∆F/∆T Dmax Dmax
Condition VFB=GND VFB=GND KA5H0165Rxx KA5M0165Rx KA5L0165Rx -25°C ≤ Ta ≤ +85°C KA5H0165Rxx KA5M0165Rx KA5L0165Rx Ta=25°C, 0V ≤ Vfb ≤ 3V Vfb ≥ 6.5V Ta=25°C, 3V ≤ Vfb ≤ VSD Ta=25°C -25°C ≤ Ta ≤ +85°C Max. inductor current
Min. 14 8.2 90 61 45 62 72
Typ. 15 8.8 100 67 50 ±5 67 77
Max. 16 9.4 110 73 55 ±10 72 82
Unit V V kHz kHz kHz % % %
IFB VSD Idelay Vref Vref/∆T IOVER
0.7 6.9 4 4.80 0.53
0.9 7.5 5 5.00 0.3 0.6
1.1 8.1 6 5.20 0.6 0.67
mA V µA V mV/°C A
CURRENT LIMIT(SELF-PROTECTION)SECTION
Note: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS (wafer test) process
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KA5X0165RXX-SERIES
Typical Pe.