K9K4G16U0M

K9W8G08U1M K9K4G08Q0M K9K4G08U0M K9K4G16Q0M K9K4G16U0M FLASH MEMORY Document Title 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 0.2 History 1. Initial issue 1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package 1. The 3rd Byte ID after 90h ID read command is don’ t cared. The 5th Byte ID after 90h ID read command is deleted. 1. The K9W8G16U1M-YCB0,YIB0,PCB0,PIB0 is deleted in line up. 2. Note is added. (VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.) 3. Pb-free Package is added. K9K4G08Q0M-PCB0,PIB0 K9K4G08U0M-PCB0,PIB0 K9K4G16U0M-PCB0,PIB0 K9K4G16Q0M-PCB0,PIB0 K9W8G08U1M-PCB0,PIB0 1. Added Addressing method for program operation. 1. The tADL(Address to Data Loading Time) is added. - tADL Minimum 100ns - tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle at program operation. 2. Added addressing method for program operation 3. PKG(TSOP1) Dimension Change Draft Date Feb. 19. 2003 Mar. 31. 2003 Apr. 9. 2003 Remark Advance Preliminary Preliminary 0.3 Apr. 30. 2003 Preliminary 0.4 0.5 Jan. 27. 2004 May.31. 2004 Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near ...