K4F660811B

K4F660811B,K4F640811B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), package type (SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 8Mx8 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES Part Identification - K4F660811B-JC(5.0V, 8K Ref.) - K4F640811B-JC(5.0V, 4K Ref.) - K4F660811B-TC(5.0V, 8K Ref.) - K4F640811B-TC(5.0V, 4K Ref.) Fast Page Mode operation CAS-before-RAS refresh capability RAS-only and Hidden refresh capability Fast parallel test mode capability TTL(5.0V) compatible inputs and outputs Early Write or output enable controlled write Active Power Dissipation Unit : mW Speed -45 -50 -60 8K 550 495 440 4K 715 660 605 JEDEC Standard pinout Available in Plastic SOJ and TSOP(II) packages +5.0V±10% power supply Refresh Cycles Part NO. K4F660811B* K4F640811B Refresh cycle 8K 4K Refresh time Normal 64ms RAS CAS W Control Clocks Vcc Vss FUNCTIONAL BLOCK DIAGRAM VBB Generator Refresh Control Refresh Counter Memory Array 8,388,608 x 8 Cells Sense Amps & I/O * Access mode & RAS only refresh mode : 8...