K4E171612D

K4E171611D, K4E151611D K4E171612D, K4E151612D CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Selfrefresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung′ s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines. FEATURES Part Identification - K4E171611D-J(T) (5V, 4K Ref.) - K4E151611D-J(T) (5V, 1K Ref.) - K4E171612D-J(T) (3.3V, 4K Ref.) - K4E151612D-J(T) (3.3V, 1K Ref.) Active Power Dissipation Speed 4K -45 -50 -60 360 324 288 3.3V 1K 540 504 468 4K 550 495 440 Unit : mW 5V 1K 825 770 715 Extended Data Out Mode operation (Fast Page Mode with Extended Data Out) 2 CAS Byte/Word Read/Write operation CAS-before-RAS refresh capability RAS-only and Hidden refresh capability Self-refresh capability (L-ver only) TTL(5V)/LVTTL(3.3V) compatible inputs an...