K4E170812D

K4E170811D, K4E160811D K4E170812D, K4E160812D CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 2Mx8 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer and personal computer. FEATURES Part Identification - K4E170811D-B(F) (5V, 4K Ref.) - K4E160811D-B(F) (5V, 2K Ref.) - K4E170812D-B(F) (3.3V, 4K Ref.) - K4E160812D-B(F) (3.3V, 2K Ref.) Active Power Dissipation Unit : mW Speed 4K -50 -60 324 288 3.3V 2K 396 360 4K 495 440 5V 2K 605 550 Extended Data Out Mode operation (Fast page mode with Extended Data Out) CAS-before-RAS refresh capability RAS-only and Hidden refresh capability Self-refresh capability (L-ver only) Fast parallel test mode capability TTL(5V)/LVTTL(3.3V) compatible inputs and outputs Early Write or output enable controll...