K1S16161CA

Preliminary K1S16161CA Document Title 1Mx16 bit Page Mode Uni-Transistor Random Access Memory UtRAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark December 12, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. -1- Revision 0.0 December 2003 Preliminary K1S16161CA 1M x 16 bit Page Mode Uni-Transistor CMOS RAM FEATURES UtRAM GENERAL DESCRIPTION The K1S16161CA is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current. Process Technology: CMOS Organization: 1M x16 bit Power Supply Voltage: 2.7~3.1V Three State Outputs Compatible with Low Power SRAM Support 4 page read mode Package Type: 48-FBGA-6.00x7.00 PRODUCT FAMILY Product Family Operating Temp. Vcc Range Speed (tRC) 70ns Power Dissipation Standby (ISB1, Max.) 80µA Operating (ICC2, Max.) 35mA PKG Type K1S16161CA-I Industrial(-40~85°C) 2.7~3.1V 48-FBGA-6.00x7.00 PIN DESCRIPTION 1 2 3 4 5 6 FUNCTIONAL BLOCK DIAGRAM Clk gen. Precharge circuit. A LB OE A0 A1 A2 CS2 Vcc Vss B I/...