TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK170
2SK170
Low Noise Audio Amplifier Applications
...
TOSHIBA Field Effect
Transistor Silicon N Channel Junction Type
2SK170
2SK170
Low Noise Audio Amplifier Applications
Unit: mm
Recommended for first stages of EQ and M.C. head amplifiers. High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) High breakdown voltage: VGDS = −40 V Low noise: En = 0.95 nV/Hz1/2 (typ.)
(VDS = 10 V, ID = 1 mA, f = 1 kHz) High input impedance: IGSS = −1 nA (max) (VGS = −30 V)
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
Symbol
VGDS IG PD Tj Tstg
Rating
−40 10 400 125 −55~125
Unit
V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
TC-92
JEITA
SC-43
TOSHIBA
2-5F1D
Weight: 0.21 g (typ.)
Characteristics
Symbol
Test Condition
Gate cut-off current Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance
Noise figure
IGSS
VGS = −30 V, VDS = 0
V (BR) GDS VDS = 0, IG = −100 µA
IDSS (Note)
VDS = 10 V, VGS = 0
VGS (OFF) Yfs Ciss Crss
NF (1)
VDS = 10 V, ID = 0.1 µA VDS = 10 V, VGS = 0, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 MHz VDG = 10 V, ID = 0, f = 1 MHz VDS = 10 V, ID = 1.0 mA, RG = 1 kΩ, f = 1 kHz
NF (2)
VDS = 10 V, ID = 1.0 mA, RG = 1 kΩ, f = 1 kHz
Note: IDSS classification GR: 2.6~6.5 mA, BL: 6.0~12 mA, V: 10~20 mA
Min Typ. Max Unit
−1.0 nA −40 V
2.6
20 mA
−0.2 −1.5 V 22 mS 30 pF ...