Document
Photocoupler
K101 • K102 • K104
These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor per a channel. The K101 has one channel in a 4-pin mini-flat SMD package. The K102 has two channels in a 8-pin mini-flat SMD package. The K104 has four channels in a 16-pin mini-flat SMD package.
FEATURES
• Mini-Flat Package • Collector-Emitter Voltage : Min.50V • Current Transfer Ratio : Min.50% (at IF=5mA, VCE=5V) • Electrical Isolation Voltage : AC3750Vrms
APPLICATIONS
• Interface between two circuits of different potential • Cordless Phone • Programmable Logic Control • Microcomputer
DIMENSION K101
4 0.2 3
(Unit : mm) K102
8 0.2 7 6 5
4.4
1 Orientation Mark 7.0 3.6 0.2 0.2 0.5
2 Orientation Mark
4.4
1
2
3
4
7.0 0.05 8.7 0.2 0.2 5.2
0.5 0.2
5.2 0.2
0.15
2.5
0.1
2.54 2.54 0.25 0.1
2.54
K104
16 0.2 15 14 13 12 11 10 9
4.4
1 Orientation Mark
2
3
4
5
6
7
8
7.0 18.8 0.2 0.2 5.2
0.5 0.2
2.5
0.1
2.54
2.54
0.1
1/3
0.15
0.05
0.4Min.
0.15
0.05
0.4
0.1
0.4Min.
2.5
0.4Min.
Photocoupler
K101 • K102 • K104
MAXIMUM RATINGS Parameter
Forward Current Input Reverse Voltage Peak Forward Current Power Dissipation
*1
Symbol
IF VR IFP PD BVCEO BVECO IC PC Viso Tstg Topr Tsol Ptot
*2
Rating
50 5 1 70 50 6 50 150 AC3750 -55~+125 -30~+100 260 200
(Ta=25¡É ) Unit
mA V A mW V V mA mW Vrms ¡É ¡É ¡É mW
Collector-Emitter Breakdown Voltage Output Emitter-Collector Breakdown Voltage Collector Current Collector Power Dissipation Input to Output Isolation Voltage Storage Temperature Operating Temperature Lead Soldering Temperature Total Power Dissipation
*3
*1. Input current with 100µs pulse width, 1% duty cycle *2. Measured at RH=40~60% for 1min *3. 1/16 inch form case for 10sec
ELECTRO-OPTICAL CHARACTERISTICS
Parameter Forward Voltage Input Reverse Current Capacitance Collector-Emitter Breakdown Voltage Output Emitter-Collector Breakdown Voltage Collector Dark Current Capacitance Current Transfer Ratio
*4
(Ta=25¡É , unless otherwise noted)
Symbol VF IR CT BVCEO BVECO ICEO CCE CTR VCE(SAT) CIO RIO tr tf Condition IF=10mA VR=5V V=0, f=1MHz IC=0.5mA IE=0.1mA IF=0, VCE=24V VCE=0, f=1MHz IF=5mA, VCE=5V IF=5mA, IC=1mA V=0, f=1MHz RH=40~60%, V=500V VCE=5V, RL=100 IC=2mA Min. 50 6 50 Typ. 1.15 30 10 0.15 1 10
11
Max. 1.30 10 100 600 0.4 -
Unit. V §Ë pF V V nA pF % V pF §Ù §Á §Á
Collector-Emitter Saturation Voltage Coupled Input-Output Capacitance Input-Output Isolation Resistance Rise Time Fall Time
*4. CTR=(IC/IF) X 100 (%)
3 3
2/3
Photocoupler
K101 • K102 • K104
Forward Current vs. Ambient Temperature
50
Collector Power Dissipation vs. Ambient Temperature
Collector Power Dissipation P C (mW)
250 100
Forward Current vs. Forward Voltage
Forward Current I F (mA)
Forward Current I F (mA)
40
200
80
30
150
60 Ta =70¡É T a=25¡É
20
100
40
10 0 -20
50 0 -20
20 T a=-55¡É 0.4 0.8 1.2 1.6
0 0 20 40 60 80 100
0
20
40
60
80
100
Ambient Temperature Ta (¡É )
Ambient Temperature Ta (¡É )
Forward Voltage VF (V)
Collector Current vs. Collector-Emitter Voltage
T a =25¡É 40 I F =30mA 1
Dark Current vs. Ambient Temperature
100
Collector Current vs. Ambient Temperature
Collector Current I C (mA)
I F =20mA 10 I F =10mA I F =5mA
Collector Current I C (mA)
Dark Current I CEO (§Ë )
V CE =24V 0.1
30
I F =20mA
20
I F =10mA
P C(max.)
0.01
1 I F =1mA
10
I F =5mA
I F =1mA 0 2 4 6 8 10
0.001
0
20
40
60
80
100
0 -20
0
20
40
60
80
Collector-Emitter Voltage VCE (V)
Ambient Temperature Ta (¡É )
Ambient Temperature Ta (¡É )
Response Time vs. Load Resistance
500 V CE =5V I C=2mA Ta =25¡É 100 100
Collector Current vs. Forward Current
Ta =25¡É V CE =5V V IN
Switching Time Test Circuit
V CC R RL VO
Response Time tr , tf (¥ì s)
Collector Current I C (mA)
10
tr
10
tf
1
Test Circuit
0.1
Input
1
0.01
Output
10%
0.1
0.1
1.0
2.0
0.001 0.1
1
10
100
90%
tr
tf
Load Resistance RL (§Ú )
Forward Current I F (mA)
Wave form
3/3
.