2003

2003 3 Watt - 28 Volts, Class C Microwave 2000 MHz GENERAL DESCRIPTION The 2003 is a COMMON BASE transistor capable of providing 3 Watts Class C, RF output power at 2000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor is uses a fully hermetic High Temperature solder Sealed package. CASE OUTLINE 55BT-1, Style 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 12 Watts 50 Volts 3.5 Volts 0.5 A - 65 to + 200 oC + 200 oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL Pout Pin Pg CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance TEST CONDITIONS F = 2000 MHz Vcb = 28 Volts Po = 3.0 Watts As Above F = 2 GHz, Po = 3 W MIN 3.0 0.47 8.1 8.5 40 30:1 TYP MAX UNITS Watt Watt dB % ηc VSWR1 BVces BVcbo BVebo Icbo hFE Cob θjc Collector to Emitter Breakdown Collector to Base Breakdown Emitter to Base Breakdown Collector to Base Current Current Gain Output Capacitance Thermal Resistance Ic = 10 mA Ic = 1 mA Ie = 1.0 mA Vcb = 28 Volts 50 45 3.5 500 10 5.0 15 Volts Volts Volts µA o Vce = 5 V, Ic = 100 mA F =1 MHz, Vcb = 28 V pF C/W Issue August 1996 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIB...