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M54HC20 Dataheets PDF



Part Number M54HC20
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description DUAL 4-INPUT NAND GATE
Datasheet M54HC20 DatasheetM54HC20 Datasheet (PDF)

M54HC20 M74HC20 DUAL 4-INPUT NAND GATE . . . . . . . . HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE IOH = IOL = 4 mA (MIN.) BALANCED PROPAGATION DELAYS tPLH = tPHL WIDE OPERATING VOLTAGE RANGE VCC (OPR) = 2 V TO 6 V PIN AND FUNCTION COMPATIBLE WITH 54/74LS20 B1R (Plastic Package) F1R (Ceramic Package) M1R (Micro Package) .

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M54HC20 M74HC20 DUAL 4-INPUT NAND GATE . . . . . . . . HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE IOH = IOL = 4 mA (MIN.) BALANCED PROPAGATION DELAYS tPLH = tPHL WIDE OPERATING VOLTAGE RANGE VCC (OPR) = 2 V TO 6 V PIN AND FUNCTION COMPATIBLE WITH 54/74LS20 B1R (Plastic Package) F1R (Ceramic Package) M1R (Micro Package) C1R (Chip Carrier) ORDER CODES : M54HC20F1R M74HC20M1R M74HC20B1R M74HC20C1R PIN CONNECTIONS (top view) DESCRIPTION The M54/74HC20 is a high speed CMOS DUAL 4INPUT NAND GATE fabricated in silicon gate 2 C MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. The internal circuit is composed of 3 stages including buffered output, which gives high noise immunity and a stable output. All inputs are equipped with protection circuits against static discharge and transient excess voltage. INPUT AND OUTPUT EQUIVALENT CIRCUIT NC = No Internal Connection December 1992 1/9 M54/M74HC20 TRUTH TABLE A L X X X H B X L X X H C X X L X H D X X X L H Y H H H H L IEC LOGIC SYMBOL PIN DESCRIPTION PIN No 1, 9 2, 10 3, 11 4, 12 5, 13 6, 8 7 14 SYMBOL 1A to 2A 1B to 2B N. C. 1C, 2C 1D, 2D 1Y to 2Y GND VCC NAME AND FUNCTION Data Inputs Data Inputs Not Connected Data Inputs Data Inputs Data Outputs Ground (0V) Positive Supply Voltage SCHEMATIC CIRCUIT (Per Gate) ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO IIK IOK ICC IO or IGND PD Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Source Sink Current Per Output Pin DC VCC or Ground Current Power Dissipation Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 ± 20 ± 20 ± 25 ± 50 500 (*) -65 to +150 300 Unit V V V mA mA mA mA mW o o C C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition isnotimplied. (*) 500 mW: ≅ 65 oC derate to 300 mW by 10mW/oC: 65 oC to 85 oC 2/9 M54/M74HC20 RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO Top tr, tf Supply Voltage Input Voltage Output Voltage Operating Temperature: M54HC Series M74HC Series Input Rise and Fall Time Parameter Value 2 to 6 0 to VCC 0 to VCC -55 to +125 -40 to +85 0 to 1000 0 to 500 0 to 400 Unit V V V C C ns o o VCC = 2 V VCC = 4.5 V VCC = 6 V DC SPECIFICATIONS Test Conditions Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 VOL Low Level Output Voltage 2.0 4.5 6.0 4.5 6.0 II ICC Input Leakage Current Quiescent Supply Current 6.0 6.0 1.9 4.4 5.9 4.18 5.68 2.0 4.5 6.0 4.31 5.8 0.0 0.0 0.0 0.17 0.18 0.1 0.1 0.1 0.26 0.26 ±0.1 1 TA = 25 oC 54HC and 74HC Min. 1.5 3.15 4.2 0.5 1.35 1.8 VI = IO=-20 µA VIH or V IL IO=-4.0 mA IO=-5.2 mA VI = IO= 20 µA VIH or V IL IO= 4.0 mA IO= 5.2 mA VI = VCC or GND VI = VCC or GND 1.9 4.4 5.9 4.13 5.63 0.1 0.1 0.1 0.33 0.33 ±1 10 Typ. Max. Value -40 to 85 oC -55 to 125 oC 74HC 54HC Min. 1.5 3.15 4.2 0.5 1.35 1.8 1.9 4.4 5.9 4.10 5.60 0.1 0.1 0.1 0.40 0.40 ±1 20 µA µA V V Max. Min. 1.5 3.15 4.2 0.5 1.35 1.8 V Max. V Unit VIH High Level Input Voltage Low Level Input Voltage High Level Output Voltage V IL V OH 3/9 M54/M74HC20 AC ELECTRICAL CHARACTERISTICS (C L = 50 pF, Input t r = tf = 6 ns) Test Conditions Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 CIN CPD (*) Input Capacitance Power Dissipation Capacitance TA = 25 C 54HC and 74HC Min. Typ. Max. 30 8 7 30 10 9 5 27 75 15 13 80 16 14 10 o Value -40 to 85 oC -55 to 125 oC 74HC 54HC Min. Max. Min. Max. 95 19 16 100 20 17 10 110 22 19 120 24 20 10 pF pF ns ns Unit tTLH tTHL tPLH tPHL Output Transition Time Propagation Delay Time (*) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operting current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC/2 (per Gate) SWITCHING CHARACTERISTICS TEST CIRCUIT TEST CIRCUIT ICC (Opr.) INPUT WAVEFORM IS THE SAME AS THAT IN CASE OF SWITCHING CHARACTERISTICS TEST. 4/9 M54/M74HC20 Plastic DIP14 MECHANICAL DATA mm MIN. a1 B b b1 D E e e3 F I L Z 1.27 3.3 2.54 0.050 8.5 2.54 15.24 7.1 5.1 0.130 0.100 0.51 1.39 0.5 0.25 20 0.335 0.100 0.600 0.280 0.201 1.65 TYP. MAX. MIN. 0.020 0.055 0.020 0.010 0.787 0.065 inch TYP. MAX. DIM. P001A 5/9 M54/M74HC20 Ceramic DIP14/1 MECHANICAL DATA mm MIN. A B D E e3 F G H L M N P Q 7.8 2.29 0.4 1.17 0.22 1.52 0.38 15.24 2.79 0.55 1.52 0.31 2.54 10.3 8.05 5.08 0.307 0.090 0.016 0.046 0.009 0.060 3.3 0.015 0.600 0.110 0.022 0.060 0.012 0.100 0.406 0.317 0.200 TYP. MAX. 20 7.0 0.130 MIN. inch TYP. MAX. 0.787 0.276 DIM. P053C 6/9 M54/M74HC20 SO14 MECHANICAL DATA DIM. MIN. A a1 a2 b b1 C c1 D E e e3 F G L M S 3.8 4.6 0.5 8.55 5.8 1.27 7.62 4.


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