M54585P

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54585P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54585P and M54585FP are eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION         INPUT          IN1→ 1 IN2→ 2 IN3→ 3 IN4→ 4 IN5→ 5 IN6→ 6 IN7→ 7 IN8→ 8 GND 9 18 →O1  17 →O2   16 →O3  15 →O4  14 →O5  13 →O6  12 →O7  11 →O8  10 →COM COMMON     OUTPUT     FEATURES High breakdown voltage (BV CEO ≥ 50V) High-current driving (Ic(max) = 500mA) With clamping diodes Driving available with TTL output or with PMOS IC output Wide operating temperature range (Ta = –20 to +75°C) Package type 18P4G(P) NC 1 20 NC APPLICATION Drives of relays and printers, digit drives of indication elements such as LEDs and lamps, and MOS-bipolar logic IC interfaces FUNCTION The M54585P and M54585FP each have eight circuits, which are NPN Darlington transistors. Input transistors have resistance of 2.7k Ω between the base and input pin. A spikekiller clamping diode is provided between each output pin and GND. Output transistor emitters are all connected to the GND pin. Collector current is 500mA maximum. The maximum collector-emitter voltage is 50V. The M54585FP is enclosed in a molded small flat package, enabling space-saving design.         INPU...