MITSUBISHI SEMICONDUCTOR <
TRANSISTOR ARRAY>
M54527P
6-UNIT 150mA DARLINGTON
TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION M54527P is six-circuit Darlington
transistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION (TOP VIEW)
IN1→ 1 IN2→ 2 IN3→ 3 INPUTS IN4→ 4 IN5→ 5
14 →O1 13 →O2 12 →O3 11 →O4 10 →O5 9 →O6 8 →COM COMMON OUTPUTS
FEATURES q High breakdown voltage (BVCEO ≥ 40V) q High-current driving (Ic(max) = 150mA) q With clamping diodes q Driving available with PMOS IC output of 8-18V q Wide input voltage range (VI = –40 to +40V) q Wide operating temperature range (Ta = –20 to +75 °C)
IN6→ 6 GND 7
Outline 14P4
CIRCUIT SCHEMATIC
COM OUTPUT
APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces
20k INPUT
20k 2k GND The six circuits share the COM and GND.
FUNCTION The M54527P have six circuits consisting of
NPN Darlington
transistors. These ICs have resistance of 20kΩ between input
transistor bases and input pins. A spike-killer clamping diode is provided between each output pin (collector) and COM pin (pin 8). The output
transistor emitters are all connected to the GND pin (pin 7). The collector current is150mA maximum. Collector-emitter supply voltage is 40V maximum.
The diodes shown by broken line are parasite diodes and must not be u...
