PD8XX2

MITSUBISHI LASER DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME PD8042,PD8932 FEATURES Active diameter 50µm Low High Very High noise speed response small dark current quantum efficiency DISCRIPTION PD8XX2 is an InGaAs avalanche photodiode suitable for receiving the light having low noise, a wavelength band of 1000 to 1600nm. This photodiode features low noise, a high quantum efficiency and a very small dark current and is suitable for the light receiving elements for long-distance optical communications. APPLICATION Receiver for long-distance fiber - optic communication systems ABSOLUTE MAXIMUM RATINGS Symbol IR IF TC Tstg Parameter Reverse current Forward current Case temperature Storage temperature Conditions Ratings 500 2 -40~+85 -40~+100 Unit µA mA ˚C ˚C ELECTRICAL /OPTICAL CHARACTERISTICS Symbol V(BR)R Ct ID η fc Parameter Breakdown voltage Capacitance Dark current Quantum efficiency Cutoff frequency (-3dB) (TC = 25˚C) Test conditions Limits Typ. 60 0.7∗ 60 80 2.5 Unit V pF nA % GHz IR = 100 µ A VR = 0.9V (BR) R,f = 1MHz VR = 0.9V (BR) R M = 1, λ = 1300nm M = 10,RL = 50 Ω ,-3dB Min. 40 1 Max. 90 0.9 100 - ∗: Ct=0.6F (typ.) for PD8932 SEP.2000 MITSUBISHI LASER DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES OUTLINE DRAWING Dimention : mm PD8042 Dimention : mm PD8932 SEP.2000 MITSUBISHI LASER DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES TYPICAL CHARACTERISTICS Fig.1 Spectral response Fig.2 Dark current, photo curren...