M54519FP

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54519P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54519P and M54519FP are seven-circuit Darlington transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION        INPUT         IN1→ 1 IN2→ 2 IN3→ 3 IN4→ 4 IN5→ 5 IN6→ 6 IN7→ 7 GND 8 16 →O1  15 →O2   14 →O3  13 →O4  OUTPUT 12 →O5  11 →O6  10 →O7  9 NC        FEATURES High breakdown voltage (BV CEO ≥ 40V) High-current driving (Ic(max) = 400mA) Driving available with PMOS IC output Wide operating temperature range (Ta = –20 to +75°C) 16P4(P) Package type 16P2N-A(FP) NC : No connection CIRCUIT DIAGRAM APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces OUTPUT INPUT 20K 20K 2K GND FUNCTION The M54519P and M54519FP each have seven circuits consisting of NPN Darlington transistors. These ICs have resistance of 20k Ω between input transistor bases and input pins. The output transistor emitters are all connected to the GND pin (pin 8). Collector current is 400mA maximum. Collector-emitter supply voltage is 40V maximum. The M54519FP is enclosed in a molded small flat package, enabling space-saving design. The seven circuits share the GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω ABSO...