EL-1K3

Infrared Emitting Diodes(GaAs) K O D E N S H I EL-1K3 DIMENSIONS The EL-1K3 is a high-power GaAs IRED mounted in durable, hermetically sealed TO-18 metal can package, which provides years of reliable performance even under demanding conditions such as use outdoors. (Unit : mm) FEATURES ¶UWide beam angle ¶U Durable ¶UHigh reliability in demanding environments APPLICATIONS ¶UOptical emitters ¶UOptical switches ¶USmoke sensors MAXIMUM RATINGS Item Reverse voltage Forward current *1 Pulse forward current Power dissipation Operating temp. Storage temp. *2 Soldering temp. (Ta=2°…) 5 Symbol VR F I FP I PD Topr. Tstg. Tsol. Rating 5 100 1 200 -30~+100 -55~+125 260 Unit V mA A mW °… °… °… *1. pulse width £∫tw ßZ100 sec.period Ï £∫ T=10msec. *2. For MAX.5 seconds at the position of 2 mm from the package ELECTRO-OPTICAL CHARACTERISTICS Item Forward voltage Reverse current Capacitance Radiant intensity Peak emission wavelength Spectral bandwidth 50% Half angle (Ta=2° 5…) Symbol VF R I Ct PO Îp ƒÎ °‚Ë Conditions F=100mA I VR=5V f=1MHz F=100mA I F=100mA I F=100mA I Min. Typ. 1.35 25 4.0 940 50 °æ 36 Max. 1.7 10 Unit. V Ï A pF mW/sr nm nm deg. 2.2 - 1- Infrared Emitting Diodes(GaAs) EL-1K3 Power dissipation Vs. Ambient temperature Radiant intensity Vs. Forward current Relative radiant intensity Vs. Ambient temperature Relative intensity Vs. Wavelength Forward current vs. Forward voltage Radiant Pattern Relative radiant intensity Vs. Distance - 2- ...