Document
Silicon Bipolar MMIC 5␣ GHz Active Double Balanced Mixer/IF␣ Amp Technical Data
IAM-81008
Features
• RF-IF Conversion Gain From 0.05– 5 GHz • IF Conversion Gain From DC to 1 GHz • Low Power Dissipation: 65␣ mW at V CC = 5 V Typical • Single Polarity Bias Supply: VCC = 4 to 8 V • Load-insensitive Performance • Conversion Gain Flat Over Temperature • Low LO Power Requirements: –5␣ dBm Typical • Low Cost Plastic Surface Mount Package
Typical applications include frequency down conversion, modulation, demodulation and phase detection. Markets include fiber-optics, GPS satelite navigation, mobile radio, and battery powered communications receivers. The IAM series of Gilbert multiplierbased frequency converters is fabricated using HP’s 10␣ GHz, f T, 25␣ GHz f MAX ISOSAT™-I silicon bipolar process. This process uses nitride self alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability.
Plastic SO-8 Package
Pin Configuration
GROUND AND THERMAL 1 CONTACT VCC1 GROUND RFIN 2 3 4 8 7 6 5 GROUND AND THERMAL CONTACT RFOUT AND VCC2 POWER CONTROL
Description
The IAM-81008 is a complete low power consumption, double balanced active mixer housed in a miniature low cost plastic surface mount package. It is designed for narrow or wide bandwidth commercial and industrial applications having RF inputs up to 5 GHz. Operation at RF and LO frequencies less than 50 MHz can be achieved using optional external capacitors to ground. The IAM-81008 is particularly well suited for applications that require load-insensitive conversion and good spurious signal suppression with minimum LO and bias power consumption.
Typical Biasing Configuration and Functional Block Diagram
Cblock IF Output 1 2 Vee = 0 V 3 4 Cblock Cblock 8 7 6 5 Cblock LO Input Note: No external baluns are required. Optional Low LO Ground Optional Low Frequencies RF Ground
VCC = 5 V
RF Input
7-119
5965-9107E
Free Datasheet http://www.Datasheet4U.com
IAM-81008 Absolute Maximum Ratings
Parameter Device Voltage Power Dissipation2,3 RF Input Power LO Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 10 V 300 mW +14 dBm +14 dBm 150°C –65 to 150°C Thermal Resistance: θjc = 80°C/W
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 4.4 mW/°C for TC > 82°C.
IAM-81008 Part Number Ordering Information
Part Number IAM-81008-TR1 Devices Per Reel 1000 Reel Size 7"
For more information, see “Tape and Reel Packaging for Semmiconductor Devices”.
IAM-81008 Electrical Specifications[1], TA = 25°C
Symbol Parameters and Test Conditions: Vcc = 5 V, ZO = 50 Ω, LO =–5 dBm, RF = –20 dBm Units Min. Typ. Max.
GC F3 dBRF F3 dB IF P1 dB IP3 NF VSWR RFif LOif LOrf ICC
Conversion Gain RF Bandwidth (GC 3 dB Down) IF Bandwidth (GC 3 dB Down) IF Output Power at 1 dB Gain Compression IF Output Third Orde.