HZU6.2Z

HZU6.2Z Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-581(Z) Rev 0 Oct. 1997 Features Low capacitance (C=8.5pF max) and can protect ESD of signal line. Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. HZU6.2Z Laser Mark 62Z Package Code URP Outline Cathode mark Mark 1 62Z 2 1. Cathode 2. Anode HZU6.2Z Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note Symbol Pd Tj Tstg *1 Value 200 150 -55 to +150 Unit mW °C °C 1. Two device total, See Fig.2. Electrical Characteristics (Ta = 25°C) Item Zener voltage Reverse current Capacitance Dynamic resistance Symbol VZ IR C rd Min 5.90 — — — Typ — — 8.0 — Max 6.50 3 8.5 60 Unit V µA pF Ω Test Condition I Z = 5 mA, 40ms pulse VR = 5.5V VR = 0V, f = 1 MHz I Z = 5 mA 2 HZU6.2Z Main Characteristic 10 -2 250 Polyimide board 20hx15wx0.8t Power Dissipation Pd (mW) (A) 10 -3 200 3.0 1.5 Iz 150 1.5 unit: mm Zener Current 10 -4 100 10 -5 50 10 -6 0 0 2 4 Zener Voltage 6 8 Vz (V) 10 0 50 100 150 200 Ambient Temperature Ta ( °C) Fig.2 Power Dissipation Vs. Ambient Temperature Fig.1 Zener current Vs. Zener voltage 10 4 Nonrepetitive Surge Reverses Power PRSM (W) PRSM t 10 3 Ta = 25°C nonrepetitive 10 2 10 1.0 10 -5 10 -4 10 -3 10 (s) -2 10 -1 1.0 Time t Fig.3 Surge Reverse Power Ratings 0.8 3 HZU6.2Z Main Characteristic 10 Transient Thermal Impedance Z th (°C/W) 4 ...