HZU6.2L

HZU6.2L Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-776(Z) Rev 0 Feb. 1999 Features Lower reverse current leakage compared with conventional products. Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. HZU6.2L Laser Mark 62C Package Code URP Outline Cathode mark Mark 1 62C 2 1. Cathode 2. Anode HZU6.2L Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note 1. See Fig.2. Symbol Pd Tj Tstg *1 Value 150 150 -55 to +150 Unit mW °C °C Electrical Characteristics (Ta = 25°C) Item Zener voltage Reverse current Dynamic resistance Symbol VZ IR rd Min 5.80   Typ    Max 6.60 100 30 Unit V nA Ω Test Condition I Z = 5 mA, 40ms pulse VR = 5.0V I Z = 5 mA 2 HZU6.2L Main Characteristic 10 10 (A) -2 250 Polyimide board 20hx15wx0.8t -3 200 10 Power Dissipation Pd (mW) -4 -5 3.0 1.5 Iz 10 150 1.5 unit: mm Zener Current 10 10 -6 -7 100 10 10 -8 50 -9 10 -10 0 1 2 3 4 5 6 7 8 0 0 50 100 150 200 Ambient Temperature Ta ( °C) Fig.2 Power Dissipation Vs. Ambient Temperature Zener Voltage Vz (V) Fig.1 Zener current Vs. Zener voltage 10 Nonrepetitive Surge Reverses Power PRSM (W) 4 PRSM t 10 3 Ta = 25°C nonrepetitive 10 2 10 1.0 10 -5 10 -4 10 -3 10 (s) -2 10 -1 1.0 Time t Fig.3 Surge Reverse Power Ratings 0.8 3 HZU6.2L Main Characteristic 10 Transient Thermal Impedance Z th (°C/W) 4 10 3 10 2 10 1.0 10...