Silicon Epitaxial Planar Zener Diode for Surge Absorb
HZM7.5FA
Silicon Epitaxial Planar Zener Diode for Surge Absorb
ADE-208-616 (Z) Rev 0 Apr. 1998 Features
• HZM7.5FA has ...
Description
HZM7.5FA
Silicon Epitaxial Planar Zener Diode for Surge Absorb
ADE-208-616 (Z) Rev 0 Apr. 1998 Features
HZM7.5FA has four devices, and can absorb external + and -surge. MPAK-5 Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HZM7.5FA Laser Mark 75A Package Code MPAK-5
Outline
1
2
1 Cathode 2 Cathode 3 Cathode
5 4 3
4 Anode 5 Cathode
(Top View)
HZM7.5FA
Absolute Maximum Ratings (Ta = 25°C)
Item Power dissipation Junction temperature Storage temperature Note Symbol Pd Tj Tstg
*1
Value 200 150 -55 to +150
Unit mW °C °C
1. Four device total, With P.C board.
Electrical Characteristics (Ta = 25°C) *2
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability
*1
Symbol VZ IR C rd —
Min 7.06 — — — 30
Typ — — — — —
Max 7.84 2 125 30 —
Unit V µA pF Ω kV
Test Condition I Z = 5 mA, 40ms pulse VR = 4V VR = 0V, f = 1 MHz I Z = 5 mA C =150pF, R = 330 Ω, Both forward and reverse direction 10 pulse
Notes 1. Failure criterion ; IR > 2 µA at VR = 4V. 2. Per one device.
2
HZM7.5FA
Main Characteristic
-2
10 10 (A) Iz Zener Current 10
-3
-4 -5
10
10 -6 10
-7
10 10
-8
-9
10
-10
0
1
2
3
4
5
6
7
8
Zener Voltage
Vz (V)
Fig.1 Zener current Vs. Zener voltage 250
1.0mm
200 Power Dissipation Pd (mW)
Cu Foil
150
Printed circuit board 25 × 62 × 1.6t mm Material: Glass Epoxy Resin+Cu Foil
100
50
0 0 50 100 150 200 Ambient Temperature Ta ( °C) Fig.2 Power Dissipation Vs. Amb...
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