HZM68ZMFA

HZM6.8ZMFA Silicon Planar Zener Diode for Surge Absorb ADE-208-783A(Z) Rev 1 Nov. 1999 Features HZM6.8ZMFA has four devices in a monolithic, and can absorb surge. Low capacitance (C=25pF max) and can protect ESD of signal line. MPAK-5 Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HZM6.8ZMFA Laser Mark 68N Package Code MPAK-5 Outline 1 2 1 Cathode 2 Cathode 3 Cathode 5 4 3 4 Anode 5 Cathode (Top View) HZM6.8ZMFA Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note Symbol Pd Tj Tstg *1 Value 200 150 -55 to +150 Unit mW °C °C 1. Four device total, See Fig.2. Electrical Characteristics (Ta = 25°C) *1 Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *2 *3 Symbol VZ IR C rd — Min 6.47 — — — 25 Typ — — — — — Max 7.00 2 25 30 — Unit V µA pF Ω kV Test Condition I Z = 5 mA, 40ms pulse VR = 3.5V VR = 0V, f = 1 MHz I Z = 5 mA C =150pF, R = 330 Ω, Both forward and reverse direction 10 pulse Notes 1. Per one device. 2. Failure criterion ; IR > 2 µA at V R = 3.5V. 3. Between cathode and anode. 2 HZM6.8ZMFA Main Characteristic 10 -2 250 1.0mm Power Dissipation Pd (mW) (A) 10 -3 200 Cu Foil Iz 150 Zener Current 10 -4 Printed circuit board 25 × 62 × 1.6t mm Material: Glass Epoxy Resin+Cu Foil 100 10 -5 50 10 -6 0 0 2 4 6 8 10 0 50 100 150 200 Zener Voltage Vz (V) Ambient Temperature Ta ( °C) Fig.2 ...