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HZM62ZWA Dataheets PDF



Part Number HZM62ZWA
Manufacturers Hitachi
Logo Hitachi
Description Silicon Epitaxial Planar Zener Diode for Surge Absorb
Datasheet HZM62ZWA DatasheetHZM62ZWA Datasheet (PDF)

HZM6.2ZWA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-499(Z) Rev 0 Feb. 1997 Features • HZM6.2ZWA has two devices, and can absorb external + and -surge. • Low capacitance (C=8.5pF max) and can protect ESD of signal line. • MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HZM6.2ZWA Laser Mark 62Z Package Code MPAK Outline 3 2 1 (Top View) 1 Cathode 2 Cathode 3 Anode HZM6.2ZWA Absolute Maximum Ratings (Ta =.

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HZM6.2ZWA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-499(Z) Rev 0 Feb. 1997 Features • HZM6.2ZWA has two devices, and can absorb external + and -surge. • Low capacitance (C=8.5pF max) and can protect ESD of signal line. • MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HZM6.2ZWA Laser Mark 62Z Package Code MPAK Outline 3 2 1 (Top View) 1 Cathode 2 Cathode 3 Anode HZM6.2ZWA Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note Symbol Pd Tj Tstg *1 Value 200 150 -55 to +150 Unit mW °C °C 1. Two device total, See Fig.2. Electrical Characteristics (Ta = 25°C) *1 Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *2 Symbol VZ IR C rd — Min 5.90 — — — 13 Typ — — 8.0 — — Max 6.50 3 8.5 60 — Unit V µA pF Ω kV Test Condition I Z = 5 mA, 40ms pulse VR = 5.5V VR = 0V, f = 1 MHz I Z = 5 mA C =150pF, R = 330 Ω, Both forward and reverse direction 10 pulse Notes 1. Per one device. 2. Failure criterion ; IR>3 µA at VR = 5.5V. 2 HZM6.2ZWA Main Characteristic 10 -2 250 1.0mm Power Dissipation Pd (mW) (A) 10 -3 200 Cu Foil 150 Printed circuit board 25 × 62 × 1.6t mm Material: Glass Epoxy Resin+Cu Foil Iz Zener Current 10 -4 100 10 -5 50 10 -6 0 0 2 4 Zener Voltage 6 8 Vz (V) 10 0 50 100 150 200 Ambient Temperature Ta ( °C) Fig.2 Power Dissipation Vs. Ambient Temperature Fig.1 Zener current Vs. Zener voltage 10 4 Nonrepetitive Surge Reverses Power PRSM (W) PRSM t 10 3 Ta = 25°C nonrepetitive 10 2 10 1.0 10 -5 10 -4 10 -3 10 (s) -2 10 -1 1.0 Time t Fig.3 Surge Reverse Power Ratings 0.8mm 3 HZM6.2ZWA Main Characteristic 10 Transient Thermal Impedance Z th (°C/W) 4 10 3 10 2 10 1.0 10 -2 10 -1 1.0 Time t (s) 10 10 2 10 3 Fig.4 Transient Thermal Impedance 4 HZM6.2ZWA Package Dimensions Unit : mm 0.65 – 0.3 + 0.1 Laser Mark 0.4 – 0.05 + 0.10 0.16 – 0.06 + 0.10 3 0.1 0.65 + – 0.3 2 0.95 1 0.95 2.8 62Z 1.9 0.3 2.8 + – 0.1 + 0.2 – 0.6 1.5 0 – 0.10 1 Cathode 2 Cathode 3 Anode Hitachi Code JEDEC Code EIAJ Code Weight (g) MPAK(1) — SC-59A 0.011 0.3 1.1 – 0.1 + 0.2 5 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Gmb.


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