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HYS72V2100GU-10

Siemens

3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module

3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module 168 pin unbuffered DIMM Modules HYS64V2100G(C)U-10 HYS72V21...


Siemens

HYS72V2100GU-10

File Download Download HYS72V2100GU-10 Datasheet


Description
3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module 168 pin unbuffered DIMM Modules HYS64V2100G(C)U-10 HYS72V2100G(C)U-10 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module for PC main memory applications 1 bank 2M x 64, 2M x 72 organisation Optimized for byte-write non-parity or ECC applications Fully PC66 layout compatible JEDEC standard Synchronous DRAMs (SDRAM) Performance: -10 fCK tAC Max. Clock frequency Max. access time from clock 66 MHz @ CL=2 100 MHz @ CL=3 9 ns @ CL=2 8 ns @ CL=3 Single +3.3V(± 0.3V ) power supply Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave) Auto Refresh (CBR) and Self Refresh Decoupling capacitors mounted on substrate All inputs, outputs are LVTTL compatible Serial Presence Detect with E 2PROM Utilizes eight / nine 2M x 8 SDRAMs in TSOPII-44 packages 4096 refresh cycles every 64 ms Gold contact pad Card Size: 133,35mm x 29,21mm x 3,00mm for HYS64/72V2100GU HYS64/72V2100GCU in chip-on-board technique Card Size : 133,35mm x 25,40mm x 3,00mm for HYS64/72V2100GCU Semiconductor Group 1 12.97 HYS64(72)V2100G(C)U-10 2M x 64/72 SDRAM-Module The HYS64(72)V21)00G(C)U-10 are industry standard 168-pin 8-byte Dual in-line Memory Modules (DIMMs) which are organised as 2M x 64 and 2M x 72 high speed memory arrays designed with Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use eight 2M x 8 SDRAMs for the 2M x 64 organisation ...




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