HYM72V8025GS-50

8M × 72-Bit EDO- DRAM Module (ECC - Module) 168 pin buffered DIMM Module HYM 72V8025GS-50/-60 HYM 72V8035GS-50/-60 168 pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module for PC main memory applications 1 bank 8 M x 72 organisation Optimized for ECC applications Hyper Page Mode - EDO Operation Performance: -50 tRAC tCAC tAA tRC tHPC RAS Access Time CAS Access Time Access Time from Address Cycle Time EDO Mode Cycle Time 50 ns 18 ns 30 ns 84 ns 20 ns -60 60 ns 20 ns 35 ns 104 ns 25 ns Single + 3.3V ± 0.3 V supply CAS-before-RAS refresh, RAS-only refresh Decoupling capacitors mounted on substrate All inputs, outputs and clock fully LVTTL & LVCMOS compatible 4 Byte interleave enabled, Dual Address inputs (A0/B0) Buffered inputs excepts RAS and DQ Parallel Presence Detects Utilizes nine 8M × 8 -DRAMs and BiCMOS buffers/line drivers VT244A Two versions: HYM 72V8035GS with SOJ-components ( 9 mm module thickness) HYM 72V8025GS with TSOPII-components ( 4 mm module thickness) 4048 refresh cycles / 64 ms with 12 / 11 addressing Gold contact pad Double sided module with 25.35 mm (1000 mil) height Semiconductor Group 1 3.97 HYM72V8025/35GS-50/-60 8M x 72-ECC EDO-Module The HYM 72V8025/35GS-50/-60 is a 64 MByte DRAM module organized as 8 388 608 words by 72bit in a 168-pin, dual read-out, single-in-line package comprising nine HYB3165805AJ/AT 8M × 8 DRAMs in 400 mil wide SOJ or TSOPII - packages mounted together with ceramic decoupli...