HYM641020GS-60

1M × 64-Bit Dynamic RAM Module HYM 641010GS-60/-70 HYM 641020GS-60/-70 Advanced Information 1 048 576 words by 64-bit organization Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time 130 ns cycle time (-70 version) Fast page mode capability with 40 ns cycle time (-60 version) 45 ns cycle time (-70 version) Single + 5 V (± 10 %) supply Low power dissipation max. 9680 mW active (-60 version) max. 8800 mW active (-70 version) CMOS – 451 mW standby TTL – 550 mW standby CAS-before-RAS refresh, RAS-only-refresh Byte Write Capability 16 decoupling capacitors mounted on substrate All inputs, outputs and clock fully TTL compatible 4 Byte interleave enabled, Dual Address inputs (A0/B0) Buffered inputs except RAS and DQ 168 pin, dual read-out, Single in-Line Memory Module Utilizes sixteen 1M × 4 -DRAMs (HYB 514400BJ/BT) and four BiCMOS 8-bit buffers/line drivers 74ABT244 Two version : HYM 641010GS with SOJ-components (8.89 mm module thickness) HYM 641020GS with TSOPII-components (4.06 mm module thickness) 1024 refresh cycles / 16 ms Optimized for use in byte-write non-parity applications Gold contact pads,double sided module with 25.35 mm (1000 mil) height Semiconductor Group 1 12.95 HYM 641010/20GS-60/-70 1M x 64 Module The HYM 641010/20GS-60/-70 is a 8 MByte DRAM module organized as 1 048 576 words by 64bit in a 168-pin, dual read-out, single-in-line package comprising sixteen HYB 514400BJ/BT 1M...