HYM368025GS-60

8M x 36-Bit EDO - DRAM Module HYM 368025S/GS-50/-60 SIMM modules with 8 388 608 words by 36-bit organization in two banks for PC main memory applications Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version) 60 ns access time 104 ns cycle time (-60 version) Hyper Page Mode (EDO) capability 20 ns cycle time (-50 version) 25 ns cycle time (-60 version) Single + 5 V (± 10 %) supply Low power dissipation max. 6820 mW active (-50 version) max. 6160 mW active (-60 version) CMOS – 132 mW standby TTL –264 mW standby CAS-before-RAS refresh RAS-only-refresh Hidden-refresh Decoupling capacitors mounted on substrate All inputs, outputs and clocks fully TTL compatible 72 pin Single in-Line Memory Module (L-SIM-72-14) with 31.75 mm height Utilizes sixteen 4Mx4-EDO-DRAMs and eight 4M x 1 EDO-DRAMs in 300 mil wide SOJ packages 2048 refresh cycles / 32 ms Optimized for use in byte-write parity applications Tin-Lead contact pads (S- version) Gold contact pads (GS - version) Semiconductor Group 1 4.97 HYM 368025S/GS-50/-60 8M × 36-Bit EDO-Module The HYM 368025S/GS-50/-60 is a 32 MByte DRAM module organized as 8 388 608 words by 36Bit in two banks in a 72-pin single-in-line package comprising sixteen HYB 5117405BJ 4M × 4 EDO-DRAMs and eight HYB 514105BJ 4M x 1 EDO-DRAMs in 300 mil wide SOJ-packages mounted together with decoupling capacitors on a PC board. Each HYB 5117405BJ and HYB 514105BJ is described in the data sheet and is ful...