HYM364020GS-60

4M x 36-Bit Dynamic RAM Module HYM 364020S/GS-60 SIMM modules with 4 194 304 words by 36-Bit organization for PC main memory applications Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) Fast page mode capability 40 ns cycle time (-60 version) Single + 5 V (± 10 %) supply Low power dissipation max. 7260 mW active (-60 version) CMOS – 66 mW standby TTL –132 mW standby CAS-before-RAS refresh RAS-only-refresh Hidden-refresh 12 decoupling capacitors mounted on substrate All inputs, outputs and clocks fully TTL compatible 72 pin Single in-Line Memory Module (L-SIM-72-12) with 22.9 mm (900 mil) height Utilizes eight 4Mx4-DRAMs and four 4Mx1-DRAMs in SOJ packages 2048 refresh cycles / 32 ms Optimized for use in byte-write parity applications Tin-Lead contact pads (S-version) Gold contact pads (GS - version) Semiconductor Group 1 6.95 HYM 364020S/GS-60 4M × 36-Bit The HYM 364020S/GS-60 is a 16 MByte DRAM module organized as 4 194 304 words by 36Bit in a 72-pin single-in-line package comprising eight HYB 5117400BJ 4M × 4 DRAMs and four HYB 514100BJ 4M x 1 DRAMS in 300 mil wide SOJ-packages mounted together with twelve 0.2 µF ceramic decoupling capacitors on a PC board. The HYM 364020S/GS-60 can also be used as a 8 388 608 words by 18-bits dynamic RAM module by means of connecting DQ0 and DQ18, DQ1 and DQ19, DQ2 and DQ20, … , DQ17 and DQ35, respectively. Each HYB 5117400BJ and HYB 514100BJ is described in the data she...