HYB514265BJ-40

256K x 16-Bit EDO-Dynamic RAM HYB 514265BJ-400/40/-45/-50 HYB 314265BJ(L)-45/-50 Preliminary Information 262 144 words by 16-bit organization 0 to 70 °C operating temperature EDO - Hyper Page Mode Performance: -400 -40 69 40 10 20 15 66 -45 79 45 12 22 18 55 -50 89 50 13 25 20 50 ns ns ns ns ns MHz Power Supply: HYB 514265BJ-400 HYB 514265BJ-40 HYB 514265BJ-45 HYB 514265BJ-50 +5 V +5 V +5 V +5 V ±5% ±10% ±10% ±10% HYB 314265BJ(L)-45 +3.3 V ±0.3 V HYB 314265BJ(L)-50 +3.3 V ±0.3 V Read, write, read-modify-write, CAS -before RAS refresh, RAS only refresh, hidden refresh mode Low Power Version (L) with Self Refresh and 250 µA self refresh current trc trac tcac taa thpc thpc 69 40 10 20 12,5 80 2 CAS / 1 WE control All inputs and outputs TTL-compatible 512 refresh cycles / 16 ms 512 refresh cycles / 128 ms (L-version) Plastic Packages: P-SOJ-40-3 400 mil width Low Power dissipation - Active(max.): 120mA / 120mA / 105mA / 95 mA - Standby : TTL Inputs (max.) 2.0 mA - Standby: CMOS Inputs (max.) 1.0 mA - Standby (L-version) 200 µA The HYB 5(3)14265BJ(L) is the new generation dynamic RAM organized as 262 144 words by 16-bit. The HYB 5(3)14265BJ(L) utilizes the SIEMENS 16M-CMOS submicron silicon gate process as well as advanced circuit techniques to provide wide operation margins, both internally and for the system user. Multiplexed address inputs permit the HYB 5(3)14265BJ(L) to be packed in a standard plastic 400mil wide P-SOJ-40-3 package. This p...