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FRX130R4 Dataheets PDF



Part Number FRX130R4
Manufacturers Intersil
Logo Intersil
Description Radiation Hardened N-Channel Power MOSFETs
Datasheet FRX130R4 DatasheetFRX130R4 Datasheet (PDF)

FRX130D, FRX130R, FRX130H April 1998 Radiation Hardened N-Channel Power MOSFETs Description The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for.

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FRX130D, FRX130R, FRX130H April 1998 Radiation Hardened N-Channel Power MOSFETs Description The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEU) and/or dose rate (GAMMA DOT) exposure. This part may be supplied as a die or in various packages other than shown above. Reliability screening is available as either non TX (commercial), TX equivalent of MIL-S19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired deviations from the data sheet. Features • 6A, 100V, rDS(ON) = 0.180Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-RAD Specifications to 100K RAD (Si) - Defined End-Point Specs at 300K RAD (Si) and 1000K RAD (Si) - Performance Permits Limited Use to 3000K RAD (Si) • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 1.50nA Per-RAD (Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2 Ordering Information PART NUMBER FRX130D1 FRX130D3 FRX130R1 FRX130R3 FRX130R4 FRX130H4 PACKAGE 18 Ld CLCC 18 Ld CLCC 18 Ld CLCC 18 Ld CLCC 18 Ld CLCC 18 Ld CLCC BRAND FRX130D1 FRX130D3 FRX130R1 FRX130R3 FRX130R4 FRX130H4 Symbol D G S Package 18 LEAD CLCC CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 File Number 3144.3 1 FRX130D, FRX130R, FRX130H Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified FRX130D, R, H 100 100 6 4 18 ±20 11.4 4.5 0.09 18 6 18 -55 to 150 300 UNITS V V A A A V W W W/oC A A A oC oC Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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