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FRX130H4

Intersil
Part Number FRX130H4
Manufacturer Intersil
Description Radiation Hardened N-Channel Power MOSFETs
Published Apr 23, 2005
Detailed Description FRX130D, FRX130R, FRX130H April 1998 Radiation Hardened N-Channel Power MOSFETs Description The Intersil has designed a...
Datasheet PDF File FRX130H4 PDF File

FRX130H4
FRX130H4

Overview
FRX130D, FRX130R, FRX130H April 1998 Radiation Hardened N-Channel Power MOSFETs Description The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.
Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product.
Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure.
It is speci...


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