APT8020LFLL

APT8020B2FLL APT8020LFLL 800V 38A 0.200W POWER MOS 7TM FREDFET B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. Lower Input Capacitance Increased Power Dissipation Lower Miller Capacitance Easier To Drive Lower Gate Charge, Qg Popular T-MAX™ or TO-264 Package FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage T-MAX™ TO-264 LFLL D G S All Ratings: TC = 25°C unless otherwise specified. APT8020 UNIT Volts Amps Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy L A C I N H C N E T IO E T C MA N A OR V AD INF 38 132 ±30 ±40 690 5.52 300 38 50 (Repetitive and Non-Repetitive) 1 4 800 Volts Watts W/°C °C Amps mJ -55 to 150 3000 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Br...