Power MOSFET
APT8015JVFR
800V 44A 0.150Ω
S G D S
POWER MOS V ®
FREDFET
Power MOS V® is a new generation of high voltage N-Channel ...
Description
APT8015JVFR
800V 44A 0.150Ω
S G D S
POWER MOS V ®
FREDFET
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
SO
ISOTOP ®
2 T-
27
"UL Recognized"
Fast Recovery Body Diode Lower Leakage Faster Switching
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
100% Avalanche Tested
FREDFET
D G S
Popular SOT-227 Package
All Ratings: TC = 25°C unless otherwise specified.
APT8015JVFR UNIT Volts Amps
800 44 176 ±30 ±40 700 5.6 -55 to 150 300 44 50
4 1
Continuous Drain Current @ TC = 25°C Pulsed Drain Current
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3600
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
800 44 0.150 100 500 ±100 2 4
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistan...
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