Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT60M75PVR
600V 60.5A 0.075Ω
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode...
Description
APT60M75PVR
600V 60.5A 0.075Ω
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
P-Pack
Faster Switching Lower Leakage
100% Avalanche Tested New High Power P-Pack Package
G
D
S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
All Ratings: TC = 25°C unless otherwise specified.
APT60M75PVR UNIT Volts Amps
600
1
RY A IN IM
MIN
Continuous Drain Current @ TC = 25°C Pulsed Drain Current
60.5 242 ±30 ±40 625 5.0
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor
Volts Watts W/°C °C Amps mJ
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
-55 to 150 300 60.5 50 3600
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions TYP MAX UNIT Volts Amps
Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) On State Drain Current
2
PR
EL
4
600 60.5 0.075 100 500 ±100 2 4
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms µA nA Volts
05...
Similar Datasheet