Document
APT60GT60BR
600V 116A
Thunderbolt IGBT™
TO-247
The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.
• Low Forward Voltage Drop • Low Tail Current • Avalanche Rated
MAXIMUM RATINGS
Symbol VCES VCGR VEC VGE I C1 I C2 I CM1 I CM2 EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage
• High Freq. Switching to 150KHz • Ultra Low Leakage Current • RBSOA and SCSOA Rated
G
C
E
C
G E
All Ratings: TC = 25°C unless otherwise specified.
Collector-Gate Voltage (RGE = 20KΩ) Emitter-Collector Voltage Gate-Emitter Voltage
JE SP CT EC IVE IF T IC EC AT H IO NI N CA
1
L
600 600 15 ±20 116 60 220 120 65 500 300
TYP
APT60GT60BR
UNIT
Volts
Continuous Collector Current @ TC = 25°C @ TC = 25°C
Continuous Collector Current @ TC = 105°C Pulsed Collector Current @ TC = 105°C
2
Amps
Pulsed Collector Current
1
Single Pulse Avalanche Energy Total Power Dissipation
mJ Watts °C
Operating and Storage Junction Temperature Range
-55 to 150
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES RBVCES VGE(TH) VCE(ON) Characteristic / Test Conditions
MIN
MAX
UNIT
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA, Tj = -55°C) Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, I C = 50mA) Gate Threshold Voltage (VCE = VGE, I C = 700µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
600 -15 3
4
5 2.5 2.8 80 2000 ±100
Volts
1.6
2.0
Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 150°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 150°C)
B
I CES
µA nA
052-6223 Rev -
O
I GES USA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT60GT60BR
Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V I C = I C2 MIN TYP MAX UNIT
3200 310
pF
Gate-Emitter Charge
JE SP CT EC IVE IF T IC EC AT H IO NI N CA
VCC = 0.5VCES
L
280 120 20 14 55
nC ns
180
Gate-Collector ("Miller ") Charge Turn-on Delay Time Rise Time
Resistive Switching (25°C) VGE = 15V I C = I C2 VCC = 0.8VCES RG = 10Ω
Turn-off Delay Time Fall Time
190 140 25 75
Turn-on Delay Time Rise Time
Turn-off Delay Time Fall Time
Inductive Switching (150°C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10Ω
ns
300 95
Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time
1.9 2.4 4.3 25 75
TJ = +150°C
mJ
Inductive Switching (25°C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10Ω
ns
Turn-off Delay Time Fall Time
260 90
B
Total Switching Losses
TJ = +25°C
3.8
mJ S
THERMAL CHARACTERISTICS
Symbol RΘJC RΘJA Torque
1 2 3
O
Forward Transconductance
VCE = 20V, I C = I C2
6
Characteristic Junction to Case Junction to Ambient Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
MIN
TYP
MAX
UNIT °C/W lb•in
0.25 40 10
Repetitive Rating: Pulse width limited by maximum junction temperature. IC = IC2, VCC = 50V, RGE = 25Ω, L = 100µH, Tj = 25°C See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6223 Rev -
.