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APT60GT60BR Dataheets PDF



Part Number APT60GT60BR
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
Datasheet APT60GT60BR DatasheetAPT60GT60BR Datasheet (PDF)

APT60GT60BR 600V 116A Thunderbolt IGBT™ TO-247 The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop • Low Tail Current • Avalanche Rated MAXIMUM RATINGS Symbol VCES VCGR VEC VGE I C1 I C2 I CM1 I CM2 EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage • High Freq. Switching to 150KHz • Ultra Low Leakage Current • RBSOA and SCSOA Rat.

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APT60GT60BR 600V 116A Thunderbolt IGBT™ TO-247 The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop • Low Tail Current • Avalanche Rated MAXIMUM RATINGS Symbol VCES VCGR VEC VGE I C1 I C2 I CM1 I CM2 EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage • High Freq. Switching to 150KHz • Ultra Low Leakage Current • RBSOA and SCSOA Rated G C E C G E All Ratings: TC = 25°C unless otherwise specified. Collector-Gate Voltage (RGE = 20KΩ) Emitter-Collector Voltage Gate-Emitter Voltage JE SP CT EC IVE IF T IC EC AT H IO NI N CA 1 L 600 600 15 ±20 116 60 220 120 65 500 300 TYP APT60GT60BR UNIT Volts Continuous Collector Current @ TC = 25°C @ TC = 25°C Continuous Collector Current @ TC = 105°C Pulsed Collector Current @ TC = 105°C 2 Amps Pulsed Collector Current 1 Single Pulse Avalanche Energy Total Power Dissipation mJ Watts °C Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES RBVCES VGE(TH) VCE(ON) Characteristic / Test Conditions MIN MAX UNIT Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA, Tj = -55°C) Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, I C = 50mA) Gate Threshold Voltage (VCE = VGE, I C = 700µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V) 600 -15 3 4 5 2.5 2.8 80 2000 ±100 Volts 1.6 2.0 Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 150°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 150°C) B I CES µA nA 052-6223 Rev - O I GES USA CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 405 S.W. Columbia Street EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT60GT60BR Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V I C = I C2 MIN TYP MAX UNIT 3200 310 pF Gate-Emitter Charge JE SP CT EC IVE IF T IC EC AT H IO NI N CA VCC = 0.5VCES L 280 120 20 14 55 nC ns 180 Gate-Collector ("Miller ") Charge Turn-on Delay Time Rise Time Resistive Switching (25°C) VGE = 15V I C = I C2 VCC = 0.8VCES RG = 10Ω Turn-off Delay Time Fall Time 190 140 25 75 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Inductive Switching (150°C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10Ω ns 300 95 Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time 1.9 2.4 4.3 25 75 TJ = +150°C mJ Inductive Switching (25°C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10Ω ns Turn-off Delay Time Fall Time 260 90 B Total Switching Losses TJ = +25°C 3.8 mJ S THERMAL CHARACTERISTICS Symbol RΘJC RΘJA Torque 1 2 3 O Forward Transconductance VCE = 20V, I C = I C2 6 Characteristic Junction to Case Junction to Ambient Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw MIN TYP MAX UNIT °C/W lb•in 0.25 40 10 Repetitive Rating: Pulse width limited by maximum junction temperature. IC = IC2, VCC = 50V, RGE = 25Ω, L = 100µH, Tj = 25°C See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 052-6223 Rev - .


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