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APT50M65LLL Dataheets PDF



Part Number APT50M65LLL
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description Power MOSFET
Datasheet APT50M65LLL DatasheetAPT50M65LLL Datasheet (PDF)

APT50M65B2LL APT50M65LLL 500V 67A 0.065Ω POWER MOS 7 R MOSFET B2LL Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses and Q are addressed . Power MOS with Power MOS 7® by significantly lowering 7® combines lower conduction and switching RDS(ON) losses g along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacit.

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APT50M65B2LL APT50M65LLL 500V 67A 0.065Ω POWER MOS 7 R MOSFET B2LL Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses and Q are addressed . Power MOS with Power MOS 7® by significantly lowering 7® combines lower conduction and switching RDS(ON) losses g along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg • Increased Power Dissipation • Easier To Drive • Popular T-MAX™ or TO-264 Package T-MaxTM TO-264 LLL D G S MAXIMUM RATINGS Symbol Parameter All Ratings: TC = 25°C unless otherwise specified. APT50M65B2LL_LLL UNIT VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 500 67 268 ±30 ±40 694 5.5 -55 to 150 300 67 50 3000 Volts Amps Volts Watts W/°C °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 500 RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 33.5A) IDSS Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 0.065 100 500 ±100 5 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT Volts Ohms µA nA Volts 050-7012 Rev D 12-2003 DYNAMIC CHARACTERISTICS APT50M65 B2LL - LLL Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy 6 Turn-off Switching Energy Turn-on Switching Energy 6 Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 250V ID = 67A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 250V ID = 67A @ 25°C RG = 0.6Ω INDUCTIVE SWITCHING @ 25°C VDD = 333V, VGS = 15V ID = 67A, RG = 3Ω INDUCTIVE SWITCHING @ 125°C VDD = 333V, VGS = 15V ID = 67A, RG = 3Ω MIN TYP 7010 1390 87 141 40 70 12 28 29 30 1035 845 1556 1013 MAX UNIT pF nC ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode) .


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