Document
APT50M65B2LL APT50M65LLL
500V 67A 0.065Ω
POWER MOS 7 R MOSFET
B2LL
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses and Q
are addressed . Power MOS
with Power MOS 7® by significantly lowering 7® combines lower conduction and switching
RDS(ON) losses
g
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg
• Increased Power Dissipation • Easier To Drive • Popular T-MAX™ or TO-264 Package
T-MaxTM
TO-264
LLL D
G S
MAXIMUM RATINGS Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified. APT50M65B2LL_LLL UNIT
VDSS ID IDM
VGS VGSM
PD
TJ,TSTG TL IAR EAR EAS
Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4
500 67 268 ±30 ±40 694 5.5 -55 to 150 300 67 50 3000
Volts Amps
Volts Watts W/°C
°C Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 33.5A)
IDSS
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
3
0.065 100 500 ±100
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT Volts Ohms
µA
nA Volts
050-7012 Rev D 12-2003
DYNAMIC CHARACTERISTICS
APT50M65 B2LL - LLL
Symbol
Ciss Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf
Eon
Eoff
Eon
Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy 6 Turn-off Switching Energy Turn-on Switching Energy 6 Turn-off Switching Energy
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz
VGS = 10V VDD = 250V ID = 67A @ 25°C
RESISTIVE SWITCHING VGS = 15V VDD = 250V
ID = 67A @ 25°C RG = 0.6Ω
INDUCTIVE SWITCHING @ 25°C VDD = 333V, VGS = 15V ID = 67A, RG = 3Ω
INDUCTIVE SWITCHING @ 125°C VDD = 333V, VGS = 15V ID = 67A, RG = 3Ω
MIN
TYP 7010 1390
87 141 40 70 12 28 29 30 1035 845
1556
1013
MAX
UNIT pF nC ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current 1 (Body Diode)
.