N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
D
S G D
S
G S
SO
2 T-
27
APT50M60JN 500V 71A 0.06OΩ
"UL Recognized" File No. E145592 (S)
ISOTOP®
POWER MOS IV ®...
Description
D
S G D
S
G S
SO
2 T-
27
APT50M60JN 500V 71A 0.06OΩ
"UL Recognized" File No. E145592 (S)
ISOTOP®
POWER MOS IV ®
MAXIMUM RATINGS
Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor
1
SINGLE DIE ISOTOP® PACKAGE
All Ratings: TC = 25°C unless otherwise specified.
APT 50M60JN UNIT Volts Amps
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
500 71 284 ± 30 690 5.52 -55 to 150 300
and Inductive Current Clamped
Volts Watts W/°C °C
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, I D = 250 µA) On State Drain Current
2
MIN APT50M60JN
TYP
MAX
UNIT Volts
500
ID(ON)
APT50M60JN
71
Amps
(VDS > I D(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ± 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, I D = 5.0mA)
2
RDS(ON)
APT50M60JN
0.060
Ohms
IDSS IGSS VGS(TH)
250 1000 ± 100 2 4
µA nA Volts
THERMAL CHARACTERISTICS
Symbol RΘJC RΘCS Characteristic Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound a...
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